Anti-reflective layer for backside illuminated CMOS image sensors
A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method includes depositing a metal oxide anti-reflection laminate on the first surface of the substrate. The metal oxide anti-reflection laminate includes one or more composite layers of thin metal oxides stacked over the photodiode. Each composite layer includes two or more metal oxide layers: one metal oxide is a high energy band gap metal oxide and another metal oxide is a high refractive index metal oxide.
1. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface opposed to the first surface;
a metal oxide anti-reflection laminate over the first surface of the semiconductor substrate;
an interconnect structure on the second surface of the semiconductor substrate;
a plurality of photodiodes in the semiconductor substrate between the metal oxide anti-reflection laminate and the interconnect structure; and
a lens over the metal oxide anti-reflection laminate corresponding to one or more of the plurality of photodiodes,
wherein
the metal oxide anti-reflection laminate comprises a plurality of metal oxide pairs respectively having a compressive stress configured to improve adhesion of the metal oxide anti-reflection laminate to the semiconductor substrate,
each metal oxide pair of the plurality of metal oxide pairs includes a high energy band gap metal oxide consisting of aluminum oxide, magnesium oxide, calcium oxide, hafnium oxide, or yttrium oxide, and a high refractive index metal oxide consisting of strontium oxide, lanthanum oxide, or barium oxide,
the high refractive index metal oxide within each of the plurality of metal oxide pairs comprises a same material continuously extending between opposing surfaces that directly contact high energy band gap metal oxides consisting of aluminum oxide, magnesium oxide, calcium oxide, hafnium oxide, or yttrium oxide,
the metal oxide anti-reflection laminate has a negative charge at an interface between adjacent metal oxide layers and overall, and
the negative charge is configured to form a depletion layer at the interface.
2. The semiconductor device of claim 1 , wherein the high energy band gap metal oxide in a first metal oxide pair of the plurality of metal oxide pairs is closer to the first surface of the semiconductor substrate than the high refractive index metal oxide in the first metal oxide pair of the plurality of metal oxide pairs is to the semiconductor substrate.
3. The semiconductor device of claim 1 , wherein a high refractive index metal oxide layer within the metal oxide anti-reflection laminate has a first side contacting a high energy band gap metal oxide layer and a second side contacting a buffer layer over the metal oxide anti-reflection laminate.
4. The semiconductor device of claim 1 , wherein the high energy band gap metal oxide is yttrium oxide.
5. The semiconductor device of claim 1 , wherein the high energy band gap metal oxide within each metal oxide pair of the plurality of metal oxide pairs has a thickness less than half that of a thickness of the high refractive index metal oxide within each metal oxide pair of the plurality of metal oxide pairs.
6. The semiconductor device of claim 1 , wherein at least one high energy band gap metal oxide of the plurality of metal oxide pairs has a band gap that is different from at least one other high energy band gap metal oxide of the plurality of metal oxide pairs.
7. The semiconductor device of claim 1 , wherein the metal oxide anti-reflection laminate comprises an outermost high refractive index metal oxide arranged along an outermost surface of the metal oxide anti-reflection laminate facing away from the semiconductor substrate.
8. The semiconductor device of claim 1 , wherein each metal oxide pair of the plurality of metal oxide pairs consists of the high energy band gap metal oxide and the high refractive index metal oxide.
9. The semiconductor device of claim 8 , wherein the metal oxide anti-reflection laminate comprises a first composite layer and a second composite layer, and wherein the first composite layer has a high refractive index metal oxide along an outermost surface of the first composite layer facing away from the semiconductor substrate, and wherein the second composite layer has a high energy band gap metal oxide along an outermost surface of the second composite layer facing away from the semiconductor substrate.
10. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface opposed to the first surface, wherein the semiconductor substrate has a p-type dopant;
a metal oxide anti-reflection laminate contacting the first surface of the semiconductor substrate, wherein the metal oxide anti-reflection laminate comprises an outermost high refractive index metal oxide arranged along an outermost surface of the metal oxide anti-reflection laminate facing away from the semiconductor substrate;
a lens over the metal oxide anti-reflection laminate corresponding to one or more of a plurality of photodiodes;
an impurity layer comprising a p+ doped layer that is arranged within the semiconductor substrate, wherein the impurity layer continuously extends from the first surface of the semiconductor substrate facing the metal oxide anti-reflection laminate to a lowermost boundary that is confined between the plurality of photodiodes and the first surface of the semiconductor substrate; and
an interconnect structure on the second surface of the semiconductor substrate,
wherein
the plurality of photodiodes are in the semiconductor substrate between the metal oxide anti-reflection laminate and the interconnect structure,
the metal oxide anti-reflection laminate comprises at least two metal oxide composite layers,
each metal oxide composite layer of the at least two metal oxide composite layers comprises a high refractive index metal oxide layer and a high energy band gap metal oxide layer, wherein the high energy band gap metal oxide layer consists of aluminum oxide, magnesium oxide, calcium oxide, hafnium oxide, or yttrium oxide,
the high refractive index metal oxide layer within the at least two metal oxide composite layers comprises a same material continuously extending between opposing surfaces that directly contact high energy band gap metal oxide layers consisting of aluminum oxide, magnesium oxide, calcium oxide, hafnium oxide, or yttrium oxide,
at least one of the at least two metal oxide composite layers comprises an amorphous material;
the metal oxide anti-reflection laminate has a negative charge at an interface between adjacent metal oxide layers and overall; and
the negative charge is configured to form a depletion layer at the interface.
11. A semiconductor device comprising:
a substrate;
a photo-sensing element in the substrate;
an adhesion layer physically contacting the substrate;
an antireflective coating over a light-receiving surface of the substrate, wherein the antireflective coating comprises:
a first composite layer comprising a first high energy band gap metal oxide layer and a first high refractive index metal oxide layer, wherein the first high energy band gap metal oxide layer has a first surface physically contacting the adhesion layer and a second surface physically contacting a first surface of the first high refractive index metal oxide layer; and
a second composite layer comprising a second high energy band gap metal oxide layer and a second high refractive index metal oxide layer, wherein the second high refractive index metal oxide layer has a first surface physically contacting a second surface of the first high refractive index metal oxide layer and a second surface physically contacting a first surface of the second high energy band gap metal oxide layer,
wherein the first high refractive index metal oxide layer comprises a first material continuously extending between the first surface and the second surface of the first high refractive index metal oxide layer and the second high refractive index metal oxide layer comprises a second material continuously extending between the first surface and the second surface of the second high refractive index metal oxide layer; and
wherein the first high energy band gap metal oxide layer and the second high energy band gap metal oxide layer consist of aluminum oxide, magnesium oxide, calcium oxide, hafnium oxide, or yttrium oxide; and
an impurity layer arranged within the substrate, wherein the impurity layer continuously extends from the light receiving surface of the substrate facing the antireflective coating to a lowermost boundary that is confined between the photo-sensing element and the light receiving surface of the substrate.
12. The semiconductor device of claim 11 , wherein the first high energy band gap metal oxide layer is between the substrate and the first high refractive index metal oxide layer.
13. The semiconductor device of claim 11 , wherein the first composite layer is between the second composite layer and the substrate, and the first high refractive index metal oxide layer is between the second high refractive index metal oxide layer and the first high energy band gap metal oxide layer.
14. The semiconductor device of claim 11 , further comprising:
a third composite layer comprising a third high energy band gap metal oxide layer and a third high refractive index metal oxide layer,
wherein an order of the third metal oxide layers in the third composite layer is different from the order of layers of at least one of the first metal oxide layers in the first composite layer or the second metal oxide layers in the second composite layer.
15. The semiconductor device of claim 11 , wherein a thickness of the first high energy band gap metal oxide layer is less than half of a thickness of the first high refractive index metal oxide layer.
16. The semiconductor device of claim 11 , wherein the first high energy band gap metal oxide layer has an amorphous structure.
17. The semiconductor device of claim 11 , wherein an interface between the first high energy band gap metal oxide layer and the first high refractive index metal oxide layer has a negative charge.
18. The semiconductor device of claim 11 , further comprising:
a third composite layer comprising a third high energy band gap metal oxide, third high refractive index metal oxide, and an additional metal oxide having an energy band gap larger than an energy band gap of the third high refractive index metal oxide and smaller than an energy band gap of the third high energy band gap metal oxide.
19. The semiconductor device of claim 11 ,
wherein the first high energy band gap metal oxide layer and the second high energy band gap metal oxide layer are aluminum oxide; and
wherein the first high refractive index metal oxide layer and the second high refractive index metal oxide layer are hafnium oxide.
20. The semiconductor device of claim 11 , wherein the first high refractive index metal oxide layer and the second high refractive index metal oxide layer are different materials.