Transistor with heat sink joined to only part of one electrode
A transistor includes: a semiconductor substrate; a first electrode on the semiconductor substrate and having first and second portions; a second electrode on the semiconductor substrate and spaced apart from the first electrode; a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode; and a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode.
1. A transistor comprising:
a semiconductor substrate;
a first electrode on the semiconductor substrate and having first and second portions;
a second electrode on the semiconductor substrate and spaced apart from the first electrode;
a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode;
a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode; and
a first resistor located between the first portion of the first electrode and the second portion of the first electrode.
2. The transistor according to claim 1 , wherein the first heat sink plate is joined to the semiconductor substrate outside a region where the first electrode, the second electrode, and the control electrode are present.
3. The transistor according to claim 1 , wherein the first portion of the first electrode is located at an end portion of the first electrode.
4. A transistor comprising:
a semiconductor substrate;
a first electrode on the semiconductor substrate and having first and second portions;
a second electrode on the semiconductor substrate and spaced apart from the first electrode;
a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode; and
a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode, wherein
the control electrode includes a first portion opposite the first portion of the first electrode, and a second portion opposite the second portion of the first electrode, and
the transistor further comprises a second resistor located between the first portion of the control electrode and the second portion of the control electrode.
5. The transistor according to claim 4 , wherein the first heat sink plate is joined to the semiconductor substrate outside a region where the first electrode, the second electrode, and the control electrode are present.
6. The transistor according to claim 4 , wherein the first portion of the first electrode is located at an end portion of the first electrode.
7. A transistor comprising:
a semiconductor substrate;
a first electrode on the semiconductor substrate and having first and second portions;
a second electrode on the semiconductor substrate and spaced apart from the first electrode;
a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode;
a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode; and
a second heat sink plate joined to the first portion of the first electrode without being joined to the second portion of the first electrode, and heat-releasing performance of the second heat sink plate is lower than heat-releasing performance of the first heat sink plate.
8. The transistor according to claim 7 , wherein the first heat sink plate is joined to the semiconductor substrate outside a region where the first electrode, the second electrode, and the control electrode are present.
9. The transistor according to claim 7 , wherein the first portion of the first electrode is located at an end portion of the first electrode.
10. A transistor comprising:
a semiconductor substrate;
a first electrode on the semiconductor substrate and having first and second portions;
a second electrode on the semiconductor substrate and spaced apart from the first electrode;
a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode;
a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode; and
a high-thermal-resistance film located between the first portion of the first electrode and the first heat sink plate and having a thermal resistance higher than thermal resistances of the first electrode and the first heat sink plate.
11. The transistor according to claim 10 , wherein the first heat sink plate is joined to the semiconductor substrate outside a region where the first electrode, the second electrode, and the control electrode are present.
12. The transistor according to claim 10 , wherein the first portion of the first electrode is located at an end portion of the first electrode.