IP Library Granted Patent US 8,963,140
Granted Patent B2
US 8,963,140 · App. 13/764,660 · Granted Feb 24, 2015

Organic photovotaics

Inventor: David M. Walba (Boulder, CO)
Assignee: The Regents of the University of Colorado
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Quick Facts
Patent No.
US 8,963,140
App. No.
13/764,660
Granted
Feb 24, 2015
Kind
B2
Abstract

The present disclosure is for improved organic semiconductors and improved organic photovoltaics. Liquid crystalline bent-core molecules in the B4 subphase of the present disclosure may be incorporated into improved organic semiconductors. Liquid crystalline bent-core molecules in the B4 subphase of the present disclosure may be incorporated into improved organic photovoltaics that may have improved quantum efficiencies over pre-existing organic photovoltaics.

Claims (20)

1. In an electrical device that incorporates an organic semiconductor material, the improvement comprising:

the organic semiconductor material including an organic crystal made of mesogens in the B4 phase.

2. The device of claim 1 , wherein the organic semiconductor material forms a heterojunction with a second organic material.

3. Then device of claim 1 , wherein the second organic material is a fullerene.

4. The device of claim 1 , wherein the device is an organo photoelectric cell.

5. The device of claim 1 , wherein the device is an organic field effect transistor.

6. The device of claim 1 , wherein the mesogens of the organic crystal include molecules selected from the group consisting of NOBOW molecules and W513 molecules.

7. The device of claim 1 , wherein the mesogens of the organic crystal include comprise a p-type semiconductor.

8. The device of claim 1 , wherein the mesogens of the organic crystal are swelled with a solution containing an acceptor.

9. The device of claim 8 wherein the acceptor comprises a n-type semiconductor.

10. The device of claim 8 wherein the acceptor is a fullerene.

11. The device of claim 9 wherein said bent-core molecules in said liquid crystalline phase comprise a p-type semiconductor and are in contact with said n-type semiconductor, said contact comprising a p-n type heterojunction.

12. The device of claim 1 wherein said bent-core molecules are coated with a solution containing an acceptor.

13. The device of claim 12 wherein the acceptor comprises an n-type semiconductor.

14. The device of claim 12 wherein said acceptor is a fullerene.

15. The device of claim 13 wherein said bent-core molecules comprise a p-type semiconductor and are in contact with said n-type semiconductor, said contact comprising a p-n type heterojunction.

16. The device of claim 1 wherein said bent-core molecules are chemically bound to an acceptor at each first end and at each second end of said bent-core molecules.

17. The device of claim 16 comprising a n-type semiconductor.

18. The device of claim 12 wherein said acceptor is a fullerene.

19. The device of claim 17 wherein said bent-core molecules in said liquid crystalline phase comprise a p-type semiconductor and are in contact with said n-type semiconductor, said contact comprising a p-n type heterojunction.

Assignments (2)
CONFIRMATORY LICENSE Recorded May 21, 2015
From: UNIVERSITY OF COLORADO
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 035694/0741 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2013
From: WALBA, DAVID M.
To: THE REGENTS OF THE UNIVERSITY OF COLORADO
Reel/Frame 030393/0072 →
Continuity (2)
Provisional Application 61597273 · Feb 10, 2012
Related Publication 20130207090A1 · Aug 15, 2013