METHOD OF MANUFACTURING A CHEMICAL MECHANICAL PLANARIZATION PAD
The present disclosure relates to a process for forming a chemical mechanical planarization pad. The process includes forming a chemical mechanical planarization pad including a polymer matrix and an embedded structure by heating the polymer matrix and the embedded structure at a first temperature T 1 and a first pressure P 1. The chemical mechanical planarization pad is then allowed to deform at a second temperature T 2 and a second pressure P 2. The chemical mechanical planarization pad is then compressed at given mold cavity thickness by applying heat at a third temperature T 3, wherein T 1> T 2, P 1> P 2, T 1≦ T 3.
1 . A process for forming a chemical mechanical planarization pad, comprising:
forming a chemical mechanical planarization pad including a polymer matrix and an embedded structure by heating said polymer matrix and said embedded structure at a first temperature T 1 and a first pressure P 1 ;
allowing said chemical mechanical planarization pad to deform at a second temperature T 2 and a second pressure P 2 ; and
compressing said chemical mechanical planarization pad at given mold cavity thickness by applying heat at a third temperature T 3 , wherein T 1 >T 2 , P 1 >P 2 , T 1 ≦T 3 .
2 . The process of claim 1 , wherein said chemical mechanical planarization pad is formed in a mold cavity having a first mold cavity thickness and said first mold cavity thickness is greater than said given mold cavity thickness.
3 . The process of claim 1 , wherein combining said polymer matrix and said embedded structure includes combining a prepolymer and a cross-linking agent with said embedded structure.
4 . The process of claim 1 , wherein said first temperature T 1 is in the range of 37° C. to 537° C. and said second temperature T 2 is at least 10° C. less than the first temperature T 1 and P 1 is in the range of 10 lbf to 300 lbf.
5 . The process of claim 1 , wherein said third temperature T 3 is at least 1° C. greater than said first temperature T 1 .
6 . The process of claim 1 , wherein said T 1 and P 1 are applied for a duration D 1 of up to 300 minutes and said chemical mechanical planarization pad are exposed to T 2 and P 2 for a duration D 2 of up to four days.
7 . The process of claim 1 , wherein said second temperature T 2 is ambient temperature and said second pressure P 2 is atmospheric pressure.
8 . The process of claim 1 , wherein said chemical mechanical planarization pad exhibits a first thickness after forming and a second thickness after compressing, wherein said first thickness is different from said second thickness.
9 . The process of claim 8 , wherein said first thickness is within +/−10% of a target thickness and said second thickness is within +/−2% of said target thickness.
10 . The process of claim 1 , wherein said chemical mechanical planarization pad exhibits a first specific gravity after forming and a second specific gravity after compressing, wherein said first specific gravity is different from said second specific gravity.
11 . The process of claim 10 , wherein said first specific gravity is +/−10% of a target specific gravity and said second specific gravity is within +/−4% said target specific gravity.
12 . The process of claim 1 , further comprising forming a second layer of said chemical mechanical planarization pad.
13 . The process of claim 12 , wherein forming said second layer occurs after forming said first layer and said second layer is formed on said first layer.
14 . The process of claim 12 , wherein forming said second layer occurs while compressing.
15 . The process of claim 12 , wherein said second layer is secured to said first layer with an adhesive.
16 . The process of claim 12 , wherein said second layer is secured to said first layer with interlocking features.