Carrier-less silicon interposer

1. A component, comprising:

a plurality of conductive elements at a first side of the component configured for connection with a plurality of corresponding contacts of a microelectronic element;

a plurality of terminals at a second side of the component opposite the first side, the terminals configured for connection with a plurality of corresponding contacts of a second component external to the component;

a first element having a coefficient of thermal expansion of less than 10 ppm/° C., the first element having a first surface coincident with or adjacent to the first side of the component and a second surface opposite the first surface;

an insulating second element coupled to the second surface of the first element, the second element having a surface coincident with or adjacent to the second side of the component and a plurality of openings extending from the surface towards the second surface of the first element, the second element including insulating structure formed of at least one second material different from a first material of which the first element is formed; and

a conductive structure extending through the openings in the second element and through the first element, the conductive structure electrically connecting the plurality of terminals with the conductive elements, wherein the conductive structure includes a conductive material extending within the opening and a metalized via extending within the first element in a first direction of a thickness of the first element in contact with the conductive material.

2. The component of claim 1 , wherein the second element is formed by molding an insulating material onto the second surface of the first element.

3. The component of claim 1 , wherein the second element is a particulate composite layer having a polymeric matrix and a particulate loading within the polymeric matrix.

4. The component of claim 1 , wherein the second element is a layer including dielectric material laminated with the first element.

5. The component of claim 1 , wherein the first element includes semiconductor material having a surface at the second surface of the first element and dielectric material overlying the layer of semiconductor material, wherein the first surface of the first element is a surface of the dielectric material.

6. The component of claim 1 , wherein an aspect ratio of the metalized via is less than or equal to five.

7. The component of claim 1 , further comprising joining elements joined to terminals at the second surface of the component configured for joining the terminals with a second component external to the component.

8. The component of claim 1 , wherein the first element has a maximum thickness of less than 100 micrometers in a first direction from the first surface of the first element to the second surface thereof.

9. The component of claim 1 , wherein a maximum thickness of the first element in a first direction from the first surface of the first element to the second surface thereof is less than a maximum thickness of the second element in the first direction.

10. The component of claim 1 , wherein the component is an interposer.

11. A system comprising a structure according to claim 1 and one or more other electronic components electrically connected to the structure.

12. The component of claim 2 , wherein the first element includes a plurality of circuit elements selected from the group consisting of active circuit elements and passive circuit elements.

13. The component of claim 8 , wherein the first element has a maximum thickness of less than ten micrometers from the first surface of the first element to the second surface thereof.

14. A system as claimed in claim 11 further comprising a housing, said structure and said other electronic components being mounted to said housing.

15. A component, comprising:

a plurality of conductive elements at a first side of the component configured for connection with a plurality of corresponding contacts of a microelectronic element;

a plurality of terminals at a second side of the component opposite the first side, the terminals configured for connection with a plurality of corresponding contacts of a second component external to the component;

a first element having a coefficient of thermal expansion of less than 10 ppm/° C., the first element having a first surface coincident with or adjacent to the first side of the component and a second surface opposite the first surface;

an insulating second element coupled to the second surface of the first element, the second element having a surface coincident with or adjacent to the second side of the component and a plurality of openings extending from the surface towards the second surface of the first element, the second element including insulating structure formed of at least one second material different from a first material of which the first element is formed; and

a conductive structure extending through the openings in the second element and through the first element, the conductive structure electrically connecting the plurality of terminals with the conductive elements, wherein the conductive structure includes a conductive via extending within the first element in a first direction of a thickness of the first element, a conductive pad at the second surface of the first element, the conductive pad coupled to the conductive via and aligned at least partially with one of the openings in the second element, wherein the conductive structure coupling at least one of the conductive elements with a terminal of the plurality of terminals includes the conductive via, the conductive pad coupled thereto, and conductive material extending within the opening and contacting the conductive pad.

16. The component of claim 15 , wherein the conductive structure includes a conductive material deposited within the opening onto the conductive pad.

17. The component of claim 15 , wherein the conductive structure includes a conductive material flowed within the opening onto the conductive pad.

18. The component of claim 15 ,

wherein the conductive structure includes a metalized via extending within the first element in a first direction of a thickness of the first element, wherein an aspect ratio of the opening is greater than an aspect ratio of the metalized via.

19. An interposer, comprising:

a plurality of conductive elements at a first side of the interposer configured for connection with a plurality of corresponding contacts of a microelectronic element;

a plurality of terminals at a second side of the interposer opposite the first side, the terminals configured for connection with a plurality of corresponding contacts of a second component external to the interposer;

a first element including a region of semiconductor material having a coefficient of thermal expansion of less than 10 ppm/° C., the first element having a first surface coincident with or adjacent to the first side of the interposer and a second surface opposite the first surface;

an overmold formed on the second surface of the first element, the second element having a surface coincident with or adjacent to the second side of the interposer and a plurality of openings extending from the surface towards the second surface of the first element; and

a conductive structure extending through the openings in the overmold and through the first element, the conductive structure electrically connecting the plurality of terminals with the conductive elements, wherein the conductive structure includes a conductive material extending within the opening and a metalized via extending within the first element in a first direction of a thickness of the first element in contact with the conductive material.