Light emitting device including a fluorescent material layer
According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.
1. A semiconductor light-emitting device, comprising:
a semiconductor light-emitting layer to emit first light;
a pair of electrodes connected to the semiconductor light-emitting layer;
a fluorescent material layer in contact with at least a center portion of the semiconductor light-emitting layer, and containing a fluorescent material to absorb the first light and radiate second light; and
a first layer covering at least a peripheral portion of the semiconductor light-emitting layer, one edge of the first layer extending toward a plane of the fluorescent material layer opposite to an interface of the semiconductor light-emitting layer and the fluorescent material layer, wherein
the fluorescent material is not contained in the first layer.
2. The semiconductor light-emitting device according to claim 1 , wherein
the fluorescent material layer and the first layer each includes resin, and
a refractive index of the resin of the first layer is higher than a refractive index of the resin of the fluorescent material layer.
3. The semiconductor light-emitting device according to claim 2 , wherein
each of the electrodes has a first surface connected to the semiconductor light-emitting layer and a second surface opposed to the first surface, the second surface being exposed on a surface of the device.
4. The semiconductor light-emitting device according to claim 1 , wherein
each of the electrodes has a first surface connected to the semiconductor light-emitting layer and a second surface opposed to the first surface, the second surface being exposed on a surface of the device.