3D IC method and device
View Patent ↗A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface. Alternatively, first and/or second contact structures are not exposed at bonding, and a via is etched and filled after bonding to electrically interconnect first and second contact structures and provide electrical access to interconnected first and second contact structure to a surface. Also, a device may be formed in a first substrate, the device being disposed in a device region of the first substrate and having a first contact structure. A via may be etched, or etched and filled, through the device region and into the first substrate before bonding and the first substrate thinned to expose the via, or filled via after bonding.
1. A method of integrating a first element having a first contact structure with a second element having a second contact structure, comprising:
forming said first and second contact structures from a metal selected from copper, tungsten, nickel, gold or alloys thereof;
forming a via in said first element exposed to at least said first contact structure;
forming a conductive material in said via and connected to at least said first contact structure;
bonding a material in said first element to a material in said second element such that said first contact structure is directly connected to said second contact structure; and
heating said first and second elements at a temperature less than 400° C. to increase the pressure between said first and second contact structures.
2. The method recited in claim 1 , comprising:
heating at a temperature below 350° C.
3. The method recited in claim 1 , comprising:
removing a native oxide from at least one of the first and second contact structures.
4. The method recited in claim 1 , comprising:
forming said first and second contact structures to have an upper surface coplanar with surfaces of said first and second elements, respectively.
5. The method recited in claim 1 , comprising:
forming said first and second contact structures to have an upper surface below respective surfaces of said first and second elements by no more than 20 nm.
6. The method recited in claim 1 , comprising:
forming said first and second contact structures to have an upper surface below respective surfaces of said first and second elements by no more than 10 nm.
7. The method recited in claim 1 , comprising:
forming said first contact structure to have an upper surface below an upper surface of said first element; and
forming said second contact structure to have a lateral area smaller than a lateral area of said first contact structure.
8. The method recited in claim 7 , comprising:
forming said second contact structure to have an upper surface below an upper surface of said second element.
9. The method recited in claim 1 , comprising:
etching a surface of at least one of said first and second elements adjacent to respective said first and second contact structures.
10. The method recited in claim 1 , comprising:
forming a layer of a metal material on at least one of said first and second contact structures.
11. The method recited in claim 10 , comprising:
forming said first contact structure from a nickel material; and
forming a layer of gold to a thickness of 5-50 nm on said nickel material.
12. The method recited in claim 1 , comprising:
forming said first contact structure from a first metal; and
forming said second contact structure from a second metal different from said first metal.
13. The metal recited in claim 1 , comprising:
forming said first contact structure to have an upper surface below an upper surface said first element; and
forming said second contact structure to have an upper surface above an upper surface said second element.
14. The method recited in claim 1 , comprising:
forming said second contact structure to have an area smaller than an area of said first contact structure.
15. The method recited in claim 1 , comprising:
forming said first contact structure to have an upper surface below an upper surface of said first element; and
forming said second contact structure to have an area smaller than an area of said first contact structure.
16. The method recited in claim 1 , comprising:
forming said first contact structure to have an upper surface below an upper surface of said first element by a first distance;
forming said second contact structure to have an upper surface below an upper surface of said second element by a second distance less than said first distance; and
forming said second contact structure to have a lateral area smaller than a lateral area of said first contact structure.
17. The method recited in claim 1 , comprising:
forming said first and second contact structures from a solid metal.
18. The method recited in claim 1 , comprising:
heating said first and second elements after bonding to thermally expand at least one of said first and second contact structures.
19. The method recited in claim 1 , comprising:
bonding one of an oxide and nitride material in said first element to one of an oxide material and nitride material in said second element.