Vertical error correction code for DRAM memory
Techniques for operating a DIMM apparatus. The apparatus comprises a plurality of DRAM devices numbered from 0 through N−1, where N is an integer greater than seven (7), each of the DRAM devices is configured in a substrate module; a buffer integrated circuit device comprising a plurality of data buffers (DB) numbered from 0 through N−1, where N is an integer greater than seven (7), each of the data buffers corresponds to one of the DRAM devices; and a plurality of error correcting modules (“ECMs”) associated with the plurality of DRAM devices.
1. A DIMM apparatus comprising:
a plurality of DRAM devices numbered from 0 through N−1, where N is an integer greater than seven (7), each of the DRAM devices is configured in a substrate module;
a buffer integrated circuit device comprising a plurality of data buffers (DB) numbered from 0 through N−1, where N is an integer greater than seven (7), each of the data buffers corresponds to one of the DRAM devices; and
a plurality of error correcting modules (“ECMs”) associated with the plurality of data buffers, respectively, each of error correcting modules configured within each of the data buffers, each error correcting module being configured to correct a single or double bit error within each DRAM device,
wherein the ECM is configured to associate error correcting check bits with a first number of bursts created from a data buffer to the DRAM device based upon a second number of bursts received from a memory controller device, the first number of bursts greater than the second number of bursts.
2. Apparatus of claim 1 wherein the ECM is configured to associate error correcting check bits with one or more bursts from or to the DRAM device; and wherein the DB encode and decode a plurality of data bursts comprising actual data and error correcting check bits.
3. Apparatus of claim 1 wherein N is equal to 8; and wherein the ECM is configured to associate error check bits from two bursts from or to the DRAM device; the two bursts being two out of ten eight bit bursts to be characterized by a double error correcting (DEC) and triple error detecting (TED) capability.
4. A method for operating a DIMM apparatus, the apparatus comprising a plurality of DRAM devices numbered from 0 through N−1, where N is an integer greater than seven (7), each of the DRAM devices is configured in a substrate module; a buffer integrated circuit device comprising a plurality of data buffers (DB) numbered from 0 through N−1, where N is an integer greater than seven (7), each of the data buffers corresponds to one of the DRAM devices; and a plurality of error correcting modules (“ECMs”) associated with the plurality of data buffers, respectively, each of error correcting modules configured within each of the data buffers, each error correcting module being configured to correct a single or double bit error within each DRAM device, the method comprising transferring one or more check bits with a first number of bursts created from a data buffer to the DRAM device based upon a second number of bursts received from a memory controller device, the first number of bursts greater than the second number of bursts; and encoding and decoding a plurality of data bursts comprising actual data and the error correcting check bits.
5. The method of claim 4 wherein N is equal to 8; and wherein the two bursts being two out of ten eight bit bursts to be characterized by a double error correcting (DEC) and triple error detecting (TED) capability.
6. The method of claim 4 wherein the first number of bursts is one greater than the second number of bursts.
7. The method of claim 6 wherein N is equal to eight.
8. The method of claim 6 wherein the ECM is configured to associate error check bits from one extra burst from or to the DRAM device; the extra burst being out of nine eight bit bursts to be characterized by a single error correcting (SEC) double error detecting (DED) code.
9. The method of claim 4 wherein the first number of bursts is two greater than the second number of bursts.
10. The method of claim 9 wherein N is equal to eight.
11. The method of claim 9 wherein the ECM is configured to associate error check bits from two extra bursts from or to the DRAM device; the two extra bursts being out of ten eight bit bursts to be characterized by a double error correcting (DEC) triple error detecting (TED) code.
12. The method of claim 9 wherein the two extra bursts are accommodated in a write cyclic redundancy check (CRC) transaction mechanism.
13. Apparatus of claim 1 wherein the first number of bursts is one greater than the second number of bursts.
14. Apparatus of claim 13 wherein N is equal to eight.
15. Apparatus of claim 13 wherein the ECM is configured to associate error check bits from one extra burst from or to the DRAM device; the extra burst being out of nine eight bit bursts to be characterized by a single error correcting (SEC) double error detecting (DED) code.
16. Apparatus of claim 13 wherein the extra burst is accommodated in a write cyclic redundancy check (CRC) transaction mechanism.
17. Apparatus of claim 1 wherein the first number of bursts is two greater than the second number of bursts.
18. Apparatus of claim 17 wherein N is equal to eight.
19. Apparatus of claim 17 wherein the ECM is configured to associate error check bits from two extra bursts from or to the DRAM device; the two extra bursts being out of ten eight bit bursts to be characterized by a double error correcting (DEC) triple error detecting (TED) code.
20. Apparatus of claim 17 wherein the two extra bursts are accommodated in a write cyclic redundancy check (CRC) transaction mechanism.