Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices

1. A thick-film paste composition comprising:

a) 85 to 99.75% by weight of an electrically conductive metal or derivative thereof, based on total solids in the composition;

b) 0.25 to 15% by weight based on solids of a lead-tellurium-lithium-oxide, wherein the lead-tellurium-lithium-oxide comprises: 30-60 wt % PbO, 40-65 wt % TeO2, and 0.1-5 wt % Li2O; and

c) an organic medium.

2. The thick-film paste of claim 1 , wherein the electrically conductive metal comprises silver.

3. The thick-film paste of claim 1 , wherein the mole ratio of lead to tellurium of the lead-tellurium-oxide is between 5/95 and 95/5.

4. The thick-film paste of claim 1 , wherein the organic medium comprises a polymer.

5. The thick-film paste of claim 4 , wherein the organic medium further comprises one or more additives selected from the group consisting of solvents, stabilizers, surfactants, and thickeners.

6. The thick-film paste of claim 1 , wherein the electrically conductive metal is 90-95 wt % of the solids.

7. The thick-film paste of claim 1 , wherein the Pb—Te—Li—O is at least partially crystalline.

8. The thick-film paste of claim 3 , further comprising one or more additives selected from the group consisting of: GeO2, Ga2O3, In2O3, NiO, CoO, ZnO, CaO, MgO, SrO, MnO, BaO, SeO2, MoO3, WO3, Y2O 3, As2O3, La2O3, Nd2O3, Bi2O3, Ta2O5, V2O5, FeO, HfO2, Cr2O3, CdO, Sb2O3, PbF2, ZrO2, Mn2O3, P2O5, CuO, La2O3, Pr2O3, Al2O3, Nd2O3, Gd2O3, Sm2O3, Dy2O3, Eu2O3, Ho2O3, Yb2O3, Lu2O3, CeO2, BiF3, SnO, SiO2, Ag2O, Nb2O5, TiO2, and metal halides selected from the group consisting of: NaCI, KBr, NaI, and LiF.

9. The thick-film paste of claim 1 , wherein the lead-tellurium-lithium-oxide further comprises oxides of one or more elements selected from the group consisting of Si, Sn, Ti, Ag, Na, K, Rb, Cs, Ge, Ga, In, Ni, Zn, Ca, Mg, Sr, Ba, Se, Mo, W, Y, As, La, Nd, Co, Pr, Al, Gd, Sm, Dy, Eu, Ho, Yb, Lu, Bi, Ta, V, Fe, Hf, Cr, Cd, Sb, Bi, F, Zr, Mn, P, Cu, Ce, and Nb.

10. A process comprising:

(a) providing a semiconductor substrate comprising one or more insulating film deposited onto at least one surface of the semiconductor substrate;

(b) applying a thick-film paste composition onto at least a portion of the insulating film to form a layered structure, wherein the thick-film paste composition comprises:

i) 85 to 99.75% by weight of an electrically conductive metal or derivative thereof, based on total solids in the composition;

ii) 0.25 to 15% by weight based on solids of a lead-tellurium-lithium-oxide, wherein the lead-tellurium-lithium-oxide comprises: 30-60 wt % PbO, 40-65 wt % TeO2, and 0.1-5 wt % Li2O; and

iii) an organic medium; and

(c) firing the semiconductor substrate, one or more insulating films, and thick-film paste wherein the organic medium of the thick-film paste is volatilized, forming an electrode in contact with the one or more insulating layers and in electrical contact with the semiconductor substrate.

11. The process of claim 10 , wherein the thick-film paste composition is applied pattern-wise onto the insulating film.

12. The process of claim 10 , wherein the firing is carried out in air or an oxygen-containing atmosphere.

13. An article comprising:

(a) a semiconductor substrate;

(b) one or more insulating layers on the semiconductor substrate; and

(c) an electrode in contact with the one or more insulating layers and in electrical contact with the semiconductor substrate, the electrode comprising an electrically conductive metal and lead-tellurium-lithium-oxide, wherein the lead-tellurium-lithium-oxide comprises: 30-60 wt % PbO, 40-65 wt % TeO2, and 0.1-5 wt % Li2O.

14. The article of claim 13 , wherein the article is a semiconductor device.

15. The article of claim 14 , wherein the semiconductor device is a solar cell.

16. The thick-film paste composition of claim 1 , wherein the lead-tellurium-lithium-oxide comprises 0 to 5% by weight of V2O5.