Three-dimensional vertically interconnected structure
The present invention discloses a three-dimensional vertically interconnected structure and a fabricating method for the same. The structure comprises at least two layers of chips which are stacked in sequence or stacked together face to face, and an adhesive material is used for adhesion between adjacent layers of said chips, each layer of chips contains a substrate layer and a dielectric layer sequentially bottom to top; an front surface of the chip has a first concave with an annular cross section, and the first concave is filled with metal inside to form a first electrical conductive ring connecting to microelectronic devices inside the chip via a redistribution layer; a first through layers of chips hole having the same radius and center as inner ring of the first electrical conductive ring penetrates the stacked chips and has a first micro electrical conductive pole inside that is electrically connected to the first electrical conductive ring. The three-dimensional vertically interconnected structure of the present invention enhances the strength of the electric interconnection and the adhesion between adjacent layers of chips, and in the meantime the disclosed fabricating method simplifies the process difficulty and therefore improves the yield.
1. A three-dimensional vertically interconnected structure, characterized in that, it comprises at least two layers of chip which are stacked in sequence or stacked together face to face, and a layer of adhesive material is used for adhesion between adjacent layers of said chip, each layer of said chip containing a substrate layer and a dielectric layer sequentially from bottom to top; a front surface of the chip has a first concave with an annular cross section, and the first concave is filled with metal therein to form a first electrical conductive ring which is connected to microelectronic devices inside the chip via a redistribution layer; a first through layers of wafers or chips hole having the same radius and the center as the inner ring of the first conductive ring penetrates the stacked chips and has a first micro electrical conductive pole therein; wherein a front surface and/or a backside surface of each layer of said wafer or chip have/has a thermal conductive ring, the front surface and/or backside surface of the wafer or chip have/has a thermal conductive layer, and the thermal conductive layer is connected with the thermal conductive ring; a second through layers of chips hole having the same radius and center as the inner ring of the thermal conductive ring penetrates the chips which are stacked and has a micro thermal conductive pole therein.
2. The three-dimensional vertically interconnected structure of claim 1 , characterized in that, the front surface and/or the backside surface of each layer of said chip have/has a second concave with an annular cross section, and the second concave is filled with metals therein to form a second conductive ring; the front surface and/or the backside surface of the chip are/is coated with a grounding conductive layer, and the second conductive ring is connected with a grounding electrical conductive layer; a third through layers of wafers or chips hole having the same radius and center as the inner ring of the second conductive ring penetrates the chips which are stacked and has a second micro electrical conductive pole therein.
3. The three-dimensional vertically interconnected structure of claim 2 , characterized in that, the grounding electrical conductive layer is of a metallic material including gold, copper or aluminum, or the grounding electrical conductive layer is of conductive paste.
4. The three-dimensional vertically interconnected structure of claim 2 , characterized in that, the first through layers of wafers or chips hole, the second through layers of wafers or chips hole and/or the third through layers of wafers or chips hole have/has a shape of cylinder, prism, cone or pyramid.
5. The three-dimensional vertically interconnected structure of any one of claim 1 or 2 , characterized in that, the adhesive material between adjacent layers of the chip has micro-fluid channel therein, and the micro-fluid channel contains a fourth through layers of wafers or chips hole vertically penetrating the chips which are stacked.
6. The three-dimensional vertically interconnected structure of claim 1 , characterized in that, the adhesive material is organics or metallic solders; the organic adhesive material includes polyimide, epoxy resin, ultraviolet rays adhesive tape, dibenzo cyclobutene, non-conductive adhesive, silicon rubber or p-Xylene, and the metallic solder includes copper, tungsten, gold, silver, tin, indium, nickel, palladium, copper-tin alloy, tin-silver-copper alloy, tin-silver alloy, gold-tin alloy, indium-gold alloy, lead-tin alloy, nickel-palladium alloy, nickel-gold alloy or nickel-palladium-gold alloy.
7. The three-dimensional vertically interconnected structure of claim 1 , characterized in that, a depth of the first concave is in a range from 1 μm to 30 μm.
8. The three-dimensional vertically interconnected structure of claim 1 , characterized in that, the thermal conductive layer is of a metallic thermal conductive material including gold, copper or aluminum.