Sputtering target for magnetic recording film, and process for producing same
View Patent ↗Provided is a sputtering target containing SiO 2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO 2 , to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.
1. A sputtering target for producing a magnetic recording film, wherein the target consists of greater than 0 mol % to no greater than 50 mol % of Cr, an amount of SiO 2 of greater than 0 mol % to no greater than 20 mol %, and Co, and a ratio of the peak intensity of cristobalites, which are crystallized SiO 2 , to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less.
2. The sputtering target for producing a magnetic recording film according to claim 1 , wherein a rate of change of the thermal expansion coefficient during temperature rising from 250° C. to 350° C. is 7% of less.
3. A sputtering target for producing a magnetic recording film, wherein the target contains greater than 0 mol % to no greater than 50 mol % of Cr, greater than 0 mol % to no greater than 50 mol % of Pt, an amount of SiO 2 of greater than 0 mol % to no greater than 5 mol %, and Co, and a ratio of the peak intensity of cristobalites, which are crystallized SiO 2 , to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less.
4. A sputtering target for producing a magnetic recording film, wherein the target contains 5 mol % or more and 60 mol % or less of Pt, an amount of SiO 2 of greater than 0 mol % to 20 mol % or less, and Fe, and a ratio of the peak intensity of cristobalites, which are crystallized SiO 2 , to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less.
5. The sputtering target for producing a magnetic recording film according to claim 3 , wherein a rate of change of the thermal expansion coefficient during temperature rising from 250° C. to 350° C. is 7% of less.
6. The sputtering target for producing a magnetic recording film according to claim 5 , wherein one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Au, Cu, and Ag is contained as an additive element in an amount of 0.01 mol % or more and 10 mol % or less.
7. The sputtering target for producing a magnetic recording film according to claim 6 , wherein one or more inorganic materials selected from TiO 2 , Cr 2 O 3 , Ta 2 O 5 , and CoO is contained as an additive material.
8. The sputtering target for producing a magnetic recording film according to claim 3 , wherein one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Au, Cu, and Ag is contained as an additive element in an amount of 0.01 mol % or more and 10 mol % or less.
9. The sputtering target for producing a magnetic recording film according to claim 3 , wherein one or more inorganic materials selected from TiO 2 , Cr 2 O 3 , Ta 2 O 5 , and CoO is contained as an additive material.
10. The sputtering target for producing a magnetic recording film according to claim 4 , wherein a rate of change of the thermal expansion coefficient during temperature rising from 250° C. to 350° C. is 7% of less.
11. The sputtering target for producing a magnetic recording film according to claim 4 , wherein one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Au, Cu, and Ag is contained as an additive element in an amount of 0.01 mol % or more and 10 mol % or less.
12. The sputtering target for producing a magnetic recording film according to claim 4 , wherein one or more inorganic materials selected from TiO 2 , Cr 2 O 3 , Ta 2 O 5 , and CoO is contained as an additive material.
13. The sputtering target according to claim 4 , wherein the sputtering target contains 2 to 20 mol % of SiO 2 .
14. The sputtering target according to claim 1 , wherein the sputtering target contains 2 to 20 mol % of SiO 2 .
15. The sputtering target according to claim 3 , wherein the sputtering target contains 2 to 5 mol % of SiO 2 .
16. A method of producing a sputtering target for use in forming a magnetic recording film, comprising the steps of:
using amorphous SiO 2 as powder raw material of SiO 2 ,
mixing the powder raw material of SiO 2 and magnetic metal powder raw materials, and
subjecting a mixture of the powder raw material of SiO 2 and magnetic metal powder raw materials to sintering at a sintering temperature of 1120° C. or less,
wherein the sputtering target produced by the sintering (a) consists of greater than 0 mol % to no greater than 50 mol % of Cr, an amount of SiO 2 of greater than 0 mol % to no greater than 20 mol %, and Co; (b) contains greater than 0 mol % to no greater than 50 mol % of Cr, greater than 0 mol % to no greater than 50 mol % of Pt, an amount of SiO 2 of greater than 0 mol % to no greater than 5 mol %, and Co; or (c) contains 5 mol % or more and 60 mol % or less of Pt, an amount of SiO 2 of greater than 0 mol % to 20 mol % or less, and Fe, and
wherein the sputtering target has a ratio of the peak intensity of cristobalites, which are crystallized SiO 2 , to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction of 1.40 or less.