Charged particle beam device and sample production method
View Patent ↗Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit ( 110 ) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit ( 120 ) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector ( 140 ) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.
1. A charged particle beam device comprising:
a sample stage which supports a sample;
a first element ion beam optical system unit;
a sample piece formed from the sample by irradiating the sample with a first element ion beam during a first FIB fabrication;
a second element ion beam optical system unit;
a removed damage layer on a surface of the sample piece from irradiating the sample piece with a second element ion beam during the second FIB fabrication;
a secondary ion mass spectrometry unit;
a simultaneous detection of an amount of a first element from the first element ion beam existing in the removed damaged layer and the second FIB fabrication by the secondary ion mass spectrometry unit;
a fabrication terminator which terminates the second FIB fabrication as a result of the amount of the first element from the first element ion beam existing in the removed damaged layer detected by the secondary ion mass spectrometry being less than a predefined threshold value for the first element existing in the removed damaged layer; and
a comparison unit comprising a processor which controls the fabrication terminator and instructs the fabrication terminator to terminate the second FIB fabrication as a result of the amount of the first element from the first element ion beam existing in the removed damaged layer being less than a predefined threshold value for the first element existing in the removed damaged layer.
2. The charged particle beam device according to claim 1 , wherein
the secondary ion mass spectrometry unit comprises any ion detector of a magnetic sector detector, a quadrupole detector, a time-of-flight detector, and a combination of the detectors.
3. The charged particle beam device according to claim 1 , wherein
the first element is gallium, and
the first element detector is configured to detect only gallium.
4. The charged particle beam device according to claim 1 , wherein
the second element is argon.
5. The charged particle beam device according to claim 1 , wherein
the charged particle beam device is configured to produce an elemental mapping image that displays distributions of the first element as a two-dimensional image, based on spectra of amounts of elements obtained by the first element detector.
6. The charged particle beam device according to claim 5 , wherein
the charged particle beam device is configured to determine the termination of the second FIB fabrication based on the distributions of the first element represented in the elemental mapping image.
7. A charged particle beam device comprising:
a sample stage which supports a sample;
a first element ion beam optical system unit;
a sample piece formed from the sample by irradiating the sample with a first element ion beam during a first FIB fabrication;
a second element ion beam optical system unit;
a removed damage layer on a surface of the sample piece from irradiating the sample piece with a second element ion beam during the second FIB fabrication;
an electron beam optical system unit;
a simultaneous detection of an amount of a first element from the first element ion beam existing in the removed damaged layer with the second FIB fabrication by the electron beam optical system unit;
an irradiated sample piece which is irradiated by an electron beam of the electron beam optical system unit;
an X-ray detector which detects X rays from the sample piece;
a fabrication terminator which terminates the second FIB fabrication as a result of the amount of the first element from the first element ion beam existing in the removed damaged layer detected by the X-ray detector being less than a predefined threshold value for the first element existing in the removed damaged layer; and
a comparison unit comprising a processor which controls the fabrication terminator and instructs the fabrication terminator to terminate the second FIB fabrication as a result of the amount of the first element from the first element ion beam existing in the removed damaged layer analyzed by an output from the X-ray detector being less than a predefined threshold value for the first element existing in the removed damaged layer.
8. The charged particle beam device according to claim 1 , wherein
the fabrication terminator is a blanker.
9. The charged particle beam device according to claim 1 , wherein
the fabrication terminator is a closure mechanism of the valve of second element ion beam optical system unit.
10. The charged particle beam device according to claim 1 , wherein
the fabrication terminator is a second element ion beam optical system controller.
11. The charged particle beam device according to claim 1 , wherein
the fabrication terminator is a sample position controller.
12. The charged particle beam device according to claim 7 , wherein
the fabrication terminator is a blanker.
13. The charged particle beam device according to claim 7 , wherein
the fabrication terminator is a closure mechanism of the valve of second element ion beam optical system unit.
14. The charged particle beam device according to claim 7 , wherein
the fabrication terminator is a second element ion beam optical system controller.
15. The charged particle beam device according to claim 7 , wherein
the fabrication terminator is a sample position controller.
16. A charged particle beam device comprising:
a sample stage which supports a sample;
a first element ion beam optical system unit which performs a first FIB fabrication to form a sample piece from the sample by irradiating the sample with a first element ion beam;
a second element ion beam optical system unit which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece by irradiating the sample piece with a second element ion beam;
a secondary ion mass spectrometry unit which detects an amount of a first element from the first element ion beam existing in the damaged layer simultaneously with the second FIB fabrication;
an interface receiving a threshold value for the amount of the first element from the first element ion beam existing in the damaged layer;
a fabrication terminator which terminates the second FIB fabrication as a result of the amount of the first element from the first element ion beam existing in the damaged layer detected by the secondary ion mass spectrometry being less than the threshold value; and
a comparison unit comprising a processor which controls the fabrication terminator and instructs the fabrication terminator to terminate the second FIB fabrication as a result of the amount of the first element from the first element ion beam existing in the damaged layer being less than the threshold value.
17. A charged particle beam device comprising:
a sample stage which supports a sample;
a first element ion beam optical system unit which performs a first FIB fabrication to form a sample piece from the sample by irradiating the sample with a first element ion beam;
a second element ion beam optical system unit which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece by irradiating the sample piece with a second element ion beam;
an electron beam optical system unit which irradiates the sample piece with an electron beam;
an X-ray detector which detects X rays from the sample piece;
an interface receiving a threshold value for the amount of the first element from the first element ion beam existing in the damaged layer;
a fabrication terminator which terminates the second FIB fabrication; and
a comparison unit comprising a processor which controls the fabrication terminator and instructs the fabrication terminator to terminate the second FIB fabrication as a result of the amount of the first element from the first element ion beam existing in the damaged layer analyzed by an output from the X-ray detector being less than the threshold value.