Method for producing aluminum nitride crystals
Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.
1. A method for producing aluminum nitride crystals, the method comprising:
introducing gas containing N atoms into a melt of a Ga—Al alloy; and
epitaxially growing aluminum nitride crystals on a seed crystal substrate in said melt of the Ga—Al alloy.
2. The method for producing aluminum nitride crystals according to claim 1 , wherein the above-mentioned seed crystal substrate is a nitrided sapphire substrate.
3. The method for producing aluminum nitride crystals according to claim 2 , wherein the above-mentioned nitrided sapphire substrate is annealed at a temperature of not less than 900 degrees C. and not more than 1500 degrees C.
4. The method for producing aluminum nitride crystals according to claim 2 , wherein aluminum nitride crystals having aluminum polarity are made to epitaxially grow on a aluminum nitride film having nitrogen polarity and being formed on the above-mentioned nitrided sapphire substrate.
5. The method for producing aluminum nitride crystals according to claim 1 , wherein, with introducing N 2 gas into the above-mentioned melt of the Ga—Al alloy, aluminum nitride crystals are made to epitaxially grow.
6. The method for producing aluminum nitride crystals according to claim 1 , wherein, a temperature of the above-mentioned melt of the Ga—Al alloy is set at not less than 1000 degrees C. and not more than 1500 degrees C. to epitaxially grow aluminum nitride crystals.
7. The method for producing aluminum nitride crystals according to claim 1 , wherein, a molar ratio of Ga to Al of the above-mentioned melt of the Ga—Al alloy is 98:2 to 40:60.
8. A crystal substrate, wherein aluminum nitride crystals having aluminum polarity are made to epitaxially grow on an aluminum nitride film having nitrogen polarity and being formed on a nitrided sapphire substrate.