Process chamber pressure control system and method
View Patent ↗A method of and apparatus for controlling pressure in a process chamber having a continuous gas inlet flow and a continuous gas outlet flow comprising providing a pulsed valve at a gas outlet, a pressure gauge, and a programmable controller and varying the pulse rate of the pulsed valve, wherein either the open time or closed time, or both open and closed times, is lengthened or shortened, depending on whether the gauge pressure is above or below the programmed setpoint.
1. A process chamber apparatus having an inlet for continuous gas inlet flow and an outlet for continuous gas outlet flow, a means for controlling process chamber pressure comprising a pressure gauge, a programmable logic controller, and a pulsed valve at, or in fluid communication with, the outlet, the pulsed valve having a controllable pulse rate, the pulsed valve regulating the process chamber pressure to maintain the pressure in the process chamber based on a programmed pressure, wherein the controller is programmed to process pressure data from the pressure gauge and to vary the pulse rate of the pulsed valve as gas enters the process chamber through the inlet, based on a difference between a measured process chamber pressure and the programmed pressure, to control the process chamber pressure by adjusting the process chamber pressure to the programmed pressure, the process chamber holding the work to be processed.
2. The apparatus of claim 1 wherein the controller is programmed to lengthen the closed time of the pulsed valve if the gauge pressure is below the programmed pressure and to shorten the closed time of the pulsed valve if the gauge pressure is above the programmed pressure, thereby maintaining the pressure in the process chamber based on the programmed pressure.
3. The apparatus of claim 1 wherein the controller is programmed to shorten the open time of the pulsed valve if the gauge pressure is below the programmed pressure and to lengthen the open time of the pulsed valve if the gauge pressure is above the programmed pressure, thereby maintaining the pressure in the process chamber based on the programmed pressure.
4. The apparatus of claim 1 wherein the controller is programmed to adjust both the open and closed timings of the pulsed valve to provide less average conductance between the process chamber and the pump if the gauge pressure is below the programmed pressure and to adjust both the open and closed timings of the pulsed valve to provide more average conductance between the process chamber and the pump if the gauge pressure is above the programmed pressure.
5. The apparatus of claim 1 wherein the gas is HF, ethanol vapor and nitrogen and the process chamber is adapted to etch semiconductor wafers.
6. The apparatus of claim 1 wherein the pressure gauge is selected from a capacitive manometer, a cold cathode gauge, and a thermocouple gauge.
7. The apparatus of claim 1 wherein the apparatus is adapted to maintain the pressure at a value within the range of 50 to 300 Torr.
8. The apparatus of claim 1 wherein the apparatus is adapted to maintain the inlet gas flow at a level of 0.2 to 4.0 SLM.
9. A method of controlling pressure in a process chamber having a continuous gas inlet flow and a continuous gas outlet flow, comprising providing a pulsed valve at a gas outlet, a pressure gauge, and a programmable controller and varying the pulse rate of the pulsed valve as gas enters the process chamber through an inlet, based on a difference between a measured process chamber pressure and a programmed pressure, the pulsed valve regulating the process chamber pressure to maintain the pressure in the process chamber based on the programmed pressure by adjusting the process chamber pressure to the programmed pressure, the process chamber holding the work to be processed.
10. The method of claim 9 comprising programming the controller to lengthen the closed time of the pulsed valve if the gauge pressure is below the programmed pressure and to shorten the closed time of the pulsed valve if the gauge pressure is above the programmed pressure, thereby maintaining the pressure in the process chamber based on the programmed pressure.
11. The method of claim 9 comprising programming the controller to shorten the open time of the pulsed valve if the gauge pressure is below the programmed pressure and to lengthen the open time of the pulsed valve if the gauge pressure is above the programmed pressure, thereby maintaining the pressure in the process chamber based on the programmed pressure.
12. The method of claim 9 comprising programming the controller to adjust both the open and closed timings of the pulsed valve to provide less average conductance between the process chamber and the pump if the gauge pressure is below the programmed pressure and to adjust both the open and closed timings of the pulsed valve to provide more average conductance between the process chamber and the pump if the gauge pressure is above the programmed pressure.
13. The method of claim 9 wherein the gas is HF, ethanol vapor and nitrogen and the process chamber is adapted to etch semiconductor wafers.
14. The method of claim 9 comprising maintaining the pressure at a value within the range of 50 to 300 Torr.
15. The method of claim 9 comprising maintaining the inlet gas flow at a level of 0.2 to 4.0 SLM.