Forming a device having a curved piezoelectric membrane

1. A method of fabricating a MEMS actuator, comprising:

forming a curved surface in a first side of a profile-transferring substrate, the first side of the profile-transferring substrate including a planar surface surrounding the curved surface;

forming a recess in a second side of the profile-transferring substrate opposite the first side, wherein the recess and the curved surface are aligned;

depositing an etch stop layer on the first side of the profile-transferring substrate, the etch stop layer covering at least the curved surface of the profile-transferring substrate;

depositing a piezoelectric layer on the etch stop layer, the piezoelectric layer covering at least the curved surface of the profile-transferring substrate; and

from the second side of the profile-transferring substrate, etching the profile-transferring substrate in the recess to expose the etch stop layer.

2. The method of claim 1 , wherein the curved surface in the first side of the profile-transferring substrate is concave relative to the planar surface in the first side of the profile-transferring substrate.

3. The method of claim 1 , wherein the curved surface in the first side of the profile-transferring substrate is convex relative to the planar surface in the first side of the profile-transferring substrate.

4. The method of claim 1 , wherein forming the curved surface in the first side of the profile-transferring substrate further comprises:

depositing a photoresist layer on the first side of the profile-transferring substrate, the first side of the profile-transferring substrate being substantially planar before the photoresist layer is deposited;

forming a curved surface in a first side of the photoresist layer, the first side of the photoresist layer including a planar surface surrounding the curved surface in the first side of the photoresist layer, and the curved surface in the first side of the photoresist layer aligned with the recess; and

etching the photoresist layer and the profile-transferring substrate from the first side of the photoresist layer to transfer a profile of the photoresist layer to the first side of the profile-transferring substrate.

5. The method of claim 4 , wherein forming the curved surface in the first side of the photoresist layer further comprises:

exposing the first side of the photoresist layer to UV light through a grayscale photomask for a predetermined duration, wherein the grayscale photomask exposes the photoresist layer to a decreasing amount of UV light with increasing radial distance from the center of the recess; and

developing the photoresist layer after the UV light exposure.

6. The method of claim 4 , wherein etching the photoresist layer and the substrate layer from the first side of the photoresist layer to transfer the profile of the photoresist layer to the first side of the profile-transferring substrate further comprises:

etching the first side of the photoresist layer and the first side of the profile-transferring substrate with a selected anisotropic etchant, wherein the selected anisotropic etchant has approximately equal selectivity for materials of the photoresist layer and the profile-transferring substrate; and

stopping the etching when the photoresist layer has been completely removed.

7. The method of claim 1 , wherein forming the curved surface in the first side of the profile-transferring substrate further comprises:

depositing a photoresist layer on the first side of the profile-transferring substrate, the first side of the profile-transferring substrate being substantially planar before the photoresist layer is deposited;

forming a curved surface in a first side of the photoresist layer, the curved surface in the first side of the photoresist layer aligned with the recess; and

etching the photoresist layer and the profile-transferring substrate from the first side of the photoresist layer to transfer a profile of the photoresist layer to the first side of the profile-transferring substrate.

8. The method of claim 7 , wherein forming the curved surface in first side of the photoresist layer further comprises:

patterning the photoresist layer such that only a portion of the photoresist layer above the recess remains on the first side of the profile-transferring substrate;

heating the photoresist layer remaining on the first side of the profile-transferring substrate such that the photoresist layer reflows to form a photoresist dome on the first side of profile-transferring substrate; and

cooling the photoresist layer such that the photoresist dome solidifies on the first side of the profile-transferring substrate.

9. The method of claim 7 , wherein etching the photoresist layer and the substrate layer from the first side of the photoresist layer to transfer the profile of the photoresist layer to the first side of the profile-transferring substrate further comprises:

etching the first side of the photoresist layer and the first side of the profile-transferring substrate with a selected anisotropic etchant, wherein the selected anisotropic etchant has approximately equal selectivity for materials of the photoresist layer and the profile-transferring substrate; and

stopping the etching when the photoresist layer has been completely removed.

10. The method of claim 1 , wherein forming the curved surface in the first side of the profile-transferring substrate further comprises:

forming a negative profile-transferring substrate, the negative profile-transferring substrate having a curved surface in a first side of the negative profile-transferring substrate, and the curved surface in the first side of the negative profile-transferring substrate being surrounded by a planar surface in the first side of the negative profile-transferring substrate;

depositing a first semiconductor layer on the first side of the negative profile-transferring substrate such that a first side of the semiconductor layer conforms to the curved surface and the planar surface of the first side of the negative profile-transferring substrate; and

removing the negative profile-transferring substrate from the first side of the negative profile-transferring substrate until the first side of the first semiconductor layer is exposed, the exposed first side of the first semiconductor layer including the curved surface and the planar surface of the profile-transferring substrate.

11. The method of claim 10 , further comprising:

prior to removing the negative profile-transferring substrate,

planarizing a second side of the first semiconductor layer opposite to the first side of the first semiconductor layer; and

bonding the second side of the first semiconductor layer to a first side of a second semiconductor layer, the second semiconductor layer and the first semiconductor layer forming at least part of the profile-transforming substrate that contains the recess.

12. The method of claim 10 , wherein forming a negative profile-transferring substrate further comprises:

depositing a photoresist layer on the first side of the negative profile-transferring substrate, the first side of the negative profile-transferring substrate being substantially planar before the photoresist layer is deposited;

forming a curved surface in a first side of the photoresist layer;

etching the photoresist layer and the negative profile-transferring substrate from the first side of the photoresist layer to transfer a profile of the photoresist layer to the first side of the negative profile-transferring substrate; and

forming a layer of oxide over at least the first side of the negative profile-transferring substrate.

13. The method of claim 10 , wherein the first semiconductor layer is made of polysilicon.

14. The method of claim 1 ,

wherein the profile-transferring substrate include a profile transferring layer and a pumping chamber layer, the profile transferring layer includes the curved surface in the first side of the profile-transferring substrate, and the pumping chamber layer includes the recess, and

wherein forming the recess in the second side of the profile-transferring substrate opposite the first side further comprises:

forming the recess in the pumping chamber layer; and

bonding pumping chamber layer to the profile transferring layer.

15. The method of claim 1 , wherein depositing the etch stop layer on the first side of the profile-transferring substrate comprises:

oxidizing the first side of the profile-transferring substrate.

16. The method of claim 1 , wherein depositing the etch stop layer on the first side of the profile-transferring substrate comprises:

depositing a metal layer on the first side of the profile-transferring substrate.

17. The method of claim 1 , wherein depositing the piezoelectric layer on the etch stop layer further comprises:

sputtering a piezoelectric material on a first side of the etch stop layer, the sputtered piezoelectric material covering at least the curved surface of the profile-transferring substrate.

18. The method of claim 1 , wherein depositing the piezoelectric layer on the etch stop layer further comprises:

forming a uniform layer of piezoelectric material on a first side of the etch stop layer; and

patterning the uniform layer of piezoelectric material to form a piezoelectric membrane that includes a curved portion covering the curved surface of the profile-transferring substrate and a planar portion that extends beyond the curved surface of the profile-transferring substrate.

19. The method of claim 1 , further comprising:

prior to depositing the piezoelectric layer on the etch stop layer, depositing a lower metal layer on the etch stop layer; and

after depositing the piezoelectric layer on the etch stop layer, depositing an upper metal layer on the piezoelectric layer.

20. The method of claim 1 , further comprising:

attaching a nozzle layer to the second side of the profile-transferring substrate, the nozzle layer includes a nozzle feature and the nozzle feature and the recess are aligned.