IP Library Granted Patent US 8,841,612
Granted Patent B2
US 8,841,612 · App. 13/812,899 · Granted Sep 23, 2014

Charged particle beam microscope

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,841,612
App. No.
13/812,899
Granted
Sep 23, 2014
Kind
B2
Abstract

This charged particle beam microscope is characterized by being provided with selection means ( 153, 155 ) for a measurement processing method for detected particles ( 118 ) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons ( 115 ) emitted from a sample ( 114 ) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

Claims (16)

1. A charged particle beam microscope comprising:

a charged particle source;

a stage that mounts a sample;

a charged particle optical system that irradiates the sample on the stage with a charged particle beam generated by the charged particle source;

a detector that detects a particle emitted from the sample irradiated by the beam;

a controller that controls the charged particle source, the stage, the charged particle optical system, and the detector; and

a processor that:

determines a beam dwell integration method for detecting the particle emitted from the sample;

carries out a beam dwell integration in accordance with the determined beam dwell integration method;

determines a frame integration method; and

carries out a frame integration in accordance with the frame integration method;

wherein when only one particle can be detected by the detector during a beam dwell time period, the processor changes the beam dwell integration method and the frame integration method.

2. The charged particle beam microscope according to claim 1 , wherein when only one particle can be detected by the detector during the beam dwell time period, the processor determines a peak value of a frequency distribution of a brightness graduation within a set range.

3. The charged particle beam microscope according to claim 1 , wherein when more than one particle can be detected by the detector during the beam dwell time period, the processor determines an average value of a brightness graduation.

4. The charged particle beam microscope according to claim 1 , wherein when more than one electron can be detected by the detector during the beam dwell time period, the processor determines an average value of a brightness graduation.

5. The charged particle beam microscope according to claim 1 , wherein when a dispersion in a brightness graduation for each beam dwell time period exceeds a threshold, the processor outputs a peak value of a frequency distribution of the brightness graduation within a set range, or a value adjusted by counting a number of times at which the brightness graduation falls within the set range from an average value of the brightness graduation, by adjusting a gain and an offset of the detector.

Assignments (1)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →