Method for production of trichlorosilane and silicon for use in the production of trichlorosilane
The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCI gas at a temperature between 250° and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCI gas, containing between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper, the remaining except for normal impurities being silicon.
1. A method for increasing trichlorosilane (TCS) selectivity in direct chlorination comprising:
reacting silicon with HCI gas at a temperature between 250 and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or in a solid bed reactor; and
supplying barium or barium compounds and copper or copper compounds to the reactor in an amount necessary to maintain a barium content in the reactor of between 100 and 50,000 ppm based on the weight of silicon in the reactor and to maintain a copper content in the reactor of between 200 and 50,000 ppm by weight, thereby increasing selectivity of trichlorosilane in direct chlorination.
2. The method according to claim 1 , wherein the barium or the barium compounds is supplied to the reactor in an amount necessary to maintain the barium content in the reactor to between 200 and 5000 ppm by weight.
3. The method according to claim 1 , wherein the barium and the copper supplied to the reactor are alloyed with the silicon.
4. The method according to claim 1 , comprising mechanically mixing the barium or the barium compounds and the copper or the copper compounds supplied to the reactor with the silicon before the mixture is supplied to the reactor.
5. The method according to claim 4 , wherein the barium compound is selected from the group consisting of barium silicide, barium chloride, barium oxide, barium carbonate, barium nitrate and barium sulfate.
6. The method according to claim 4 , wherein the copper compound is selected from the group consisting of copper, copper alloys, copper silicide, copper oxides, copper chlorides, copper carbonate, copper nitrate and copper hydroxide.
7. The method according to claim 1 , comprising adding the barium and the silicon separately to the reactor. barium or barium compounds is supplied to the reactor in an amount necessary to maintain the barium content in the reactor to between 200 and 5000 ppm by weight.
8. The method according to claim 7 , comprising adding the barium compounds to the reactor with the HCl gas.