Granted Patent
B2
US 9,802,220 · App. 13/817,591 · Granted Oct 31, 2017
Molybdenum (IV) amide precursors and use thereof in atomic layer deposition
Inventors:
Peter Nicholas Heys (Crewe, GB); Rajesh Odedra (Victoria, CA); Sarah Louise Hindley (Liverpool, GB)
Assignee:
Merck Patent GmbH
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Abstract
Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR 1 R 2 ; R 1 and R 2 are C 1 -C 6 -alkyl or hydrogen; R is C 1 -C 6 -alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO 2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)] 4 are disclosed herein.
Claims (1)
1. A method of forming a MoO 2 film by atomic layer deposition, the method comprising delivering Mo[N(Me)(Et)] 4 to a substrate.
Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Sep 26, 2017
From: SIGMA-ALDRICH CO. LLC.
To: MERCK PATENT GMBH
Reel/Frame 043692/0802 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Apr 12, 2013
From: HEYS, PETER NICHOLAS; ODEDRA, RAJESH; HINDLEY, SARAH LOUISE
To: SIGMA-ALDRICH CO. LLC
Reel/Frame 030204/0203 →
Continuity (2)
Provisional Application
61377692
· Aug 27, 2010