Use of zwitterionic molecules for forming a hole or electron transport layer
The invention relates to the use of zwitterionic molecules for forming a hole or electron transport layer. The preferred zwitterionic molecules of the invention are derivatives of p-benzoquinonemonoimines. The invention is useful in the field of electronic devices in particular.
1. A process for forming a hole or electron transport layer comprising a step of depositing on a surface of a substrate at least one monoimine derivatives of following formula I:
in which R represents:
H,
a linear or branched C 1 to C 20 alkyl radical which can be substituted by one or more radicals selected from the group consisting of hydroxyl, amino, C 1 to C 12 aminoalkyl, C 1 to C 12 alkoxy, pyridine, phosphine, thioether, thiol, C 1 to C 12 alkene, C 1 to C 12 alkyne and halogen radicals,
a benzyl radical which can be substituted by one or more radicals selected from the group consisting of hydroxyl, amino, C 1 to C 12 aminoalkyl, C 1 to C 12 alkoxy and halogen radicals.
2. The process as claimed in claim 1 , wherein, in the formula I, R is chosen from a hydrogen atom or a —C 4 H 9 , —C 3 H 6 —S—CH 3 , C 6 H 5 —CH 2 — or —C 3 H 6 —O—CH 3 group.
3. The process as claimed in claim 1 , wherein, in the formula I, R is chosen from a —C 4 H 9 group or a C 6 H 5 —CH 2 — group.
4. A process for the manufacture of a substrate having hole or electron transport properties, characterized in that it comprises the bonding, to at least one surface made of a conducting material of a support, of at least one p-benzoquinone imine derivative of following formula I:
in which R represents:
H,
a linear or branched C 1 to C 20 alkyl radical which can be substituted by one or more radicals chosen from hydroxyl, amino, C 1 to C 12 aminoalkyl, C 1 to C 12 alkoxy, pyridine, phosphine, thioether, thiol, C 1 to C 12 alkene, C 1 to C 12 alkyne and halogen radicals,
a benzyl radical which can be substituted by one or more radicals chosen from hydroxyl, amino, C 1 to C 12 aminoalkyl, C 1 to C 12 alkoxy and halogen radicals.
5. The process as claimed in claim 4 , characterized in that, in the formula I, R is chosen from a hydrogen atom or a —C 4 H 9 , —C 3 H 6 —S—CH 3 , C 6 H 5 —CH 2 — or —C 3 H 6 —O—CH 3 group.
6. The process as claimed in claim 4 , characterized in that, in the formula I, R is chosen from a —C 4 H 9 group or a C 6 H 5 —CH 2 — group.
7. The process as claimed in claim 4 , characterized in that the surface is made of a material chosen from Al, Au, AuCu 3 , ITO, TiAu, AlAu, graphene, LaB 6 , GdB 6 , Ni, Co, Fe, Pd, Pt, and the alloys of these different materials.
8. A device comprising a substrate obtained by the process as claimed in claim 4 .
9. The device as claimed in claim 8 , characterized in that it is a device of the OLED type.
10. The device as claimed in claim 8 , characterized in that it is a device of the OPV type.
11. The device as claimed in claim 8 , characterized in that it is a device of the OFET type.
12. The substrate obtained by the process as claimed in claim 4 , wherein said substrate is an interface barrier screen of an electrode/molecular film system.
13. The substrate obtained by the process as claimed in claim 4 , wherein said substrate is an interface layer for a diode effect.
14. The substrate obtained by the process as claimed in claim 4 , wherein said substrate is an optically transparent layer having conducting properties.
15. The substrate obtained by the process as claimed in claim 4 , wherein said substrate is an electrode having conducting properties.
16. A substrate having hole or electron transport properties, characterized in that it comprises a support, at least one surface of which is made of a material chosen from Al, Au, AuCu 3 , ITO, TiAu, AlAu, graphene, LaB 6 , GdB 6 , Ni, Co, Fe, Pd, Pt, and the alloys of these different materials, and in that a layer of at least one type of molecule of following formula I-1:
in which:
n=0 or 1, and
R 1 and R 2 are chosen from the following pairs:
R 1 is:
in which case R 2 is H and n=0,
R 1 is —C 4 H 9 , in which case:
either R 2 is H and n=1, in which case R 3 is M,
or R 2 is M and n=0,
R 1 is —CH 2 —C 6 H 5 -M, in which case R 2 is H and n=0,
R 1 is —CH 2 —C 6 H 5 , in which case:
either R 2 is H and n=1, in which case R 3 is M,
or R 2 is M and n=0,
in which M denotes an atom or a molecule of the material of which said surface of the support is composed,
is bonded to said surface.
17. The substrate as claimed in claim 16 , characterized in that, in the formula I-1, R 1 is chosen from a —CH 2 —C 6 H 5 -M group or a group:
18. A device comprising a substrate as claimed in claim 16 .
19. The device as claimed in claim 18 , characterized in that it is a device of the OLED type.
20. The device as claimed in claim 18 , characterized in that it is a device of the OPV type.
21. The device as claimed in claim 18 , characterized in that it is a device of the OFET type.
22. The use of a substrate as claimed in claim 16 , wherein said substrate is an interface barrier screen of an electrode/molecular film system.
23. The use of a substrate as claimed in claim 16 , wherein said substrate is an interface layer for a diode effect.
24. The use of a substrate as claimed in claim 16 , wherein said substrate is an optically transparent layer having conducting properties.
25. The use of a substrate as claimed in claim 16 , wherein said substrate is an electrode having conducting properties.