Light source mount
A mount for a semiconductor device, the mount comprising: an insulating substrate having first and second parallel face surfaces, an edge surface that connects the parallel surfaces and having formed therein a recess having an opening on the first face surface; an electrically conductive plug seated in the recess and having a first exposed surface on or near the edge surface and a second exposed surface on or near the first face surface.
1. A mount for a semiconductor device, the mount comprising:
an insulating substrate having first and second parallel face surfaces, an edge surface that connects the parallel surfaces and having formed therein a recess having an opening on the first face surface;
an electrically conductive plug seated in the recess and having a first exposed surface on or near the edge surface and a second exposed surface on or near the first face surface,
wherein the recess and the plug is characterized by a cross section having a dimension substantially parallel to the edge surface at a first distance from the edge surface that is smaller than a dimension of the cross section at a second, larger distance from the edge surface.
2. A mount according to claim 1 and comprising a conductive track formed on the first face surface that electrically contacts the exposed surface of the plug on the first face surface.
3. A mount according to claim 1 wherein the plug has a second surface exposed on or near the second face surface.
4. A mount according to claim 3 and comprising a conductive track formed on the second face surface that electrically contacts the exposed surface of the plug on the second face surface.
5. A mount according to claim 1 wherein the cross section comprises a first region and a second region connected by a neck region, the neck region being characterized by a relatively small width substantially parallel to the edge surface, and the first and second regions being characterized by relatively large widths parallel to the narrow width of the neck region.
6. A mount according to claim 5 wherein the cross section has a periphery coincident with a periphery of an area defined by two circles that partially overlap.
7. A mount according to claim 1 wherein the cross section has a trapezoidal shape.
8. A mount according to claim 1 wherein the semiconductor device comprises a laser diode.
9. A method of producing a mount for a semiconductor device, the method comprising:
forming a recess in a substrate formed from an electrically insulating material and having first and second parallel face surfaces, wherein the recess has an opening on the first face surface, and the recess is characterized by a cross section having a dimension parallel to and at a first distance from a line between the recesses in the pair of closely spaced rows to which the recess belongs that is smaller than a dimension of the cross section at a second, larger distance from the line;
filling the recess with an electrically conductive material; and
cutting the substrate to form an edge surface that connects the face surfaces and an exposed surface of the conductive material.
10. A method according to claim 9 wherein forming a recess comprises forming an array of rows and columns of recesses.
11. A method according to claim 10 wherein the rows comprise pairs of relatively closely spaced rows.
12. A method according to claim 9 wherein cutting the substrate comprises cutting the substrate along a line between a pair of closely spaced rows of recesses.
13. A method according to claim 9 , wherein the cross section comprises a first region and a second region connected by a neck region, the neck region being characterized by a relatively small width substantially parallel to the edge surface, and the first and second regions being characterized by relatively large widths parallel to the narrow width of the neck region.
14. A method according to claim 13 wherein the cross section has a periphery coincident with a periphery of an area defined by two circles that partially overlap.