Silicon on insulator integrated high-current N type combined semiconductor device

1. A SOI integratable high-current N-type combined semiconductor device, comprising: a P-type silicon substrate ( 1 ); a buried oxide layer ( 2 ) arranged on the P-type silicon substrate ( 1 ); characterized in that a P-type deep trench ( 16 ) arranged above the center of the buried oxide layer ( 2 ); an N-type annular source region ( 11 ) and a P-type body contact region ( 12 ) arranged on the P-type deep trench ( 16 ), wherein, the N-type annular source region ( 11 ) surrounds outside of the P-type body contact region ( 12 ), and a piece of source electrode metal ( 72 ) is arranged on the N-type source region ( 11 ) and the P-type body contact region ( 12 ), designed to interconnect the N-type source region ( 11 ) and the P-type body contact region ( 12 ); a first isolation region ( 101 ) and a second isolation region ( 102 ) are arranged on the buried oxide layer ( 2 ), and the first isolation region ( 101 ) and second isolation region ( 102 ) extend towards the center of the buried oxide layer ( 2 ) and thereby define a first region (I) and a second region (II); an N-type lateral insulated-gate bipolar transistor is arranged in the first region (I), and a PNP-type high-voltage bipolar transistor and an N-type lateral double-diffused metal oxide layer field-effect transistor are arranged in the second region (II), wherein, the source region of the N-type lateral insulated-gate bipolar transistor employs the N-type annular source region ( 11 ), the collector region of the PNP -type high-voltage bipolar transistor employs the P-type body contact region ( 12 ), the source region of the N-type lateral double-diffused metal oxide layer field-effect transistor employs the N-type annular source region ( 11 ), and the P-type body contact region ( 12 ) is also used as the body contact region of the N-type lateral insulated-gate bipolar transistor; a piece of drain electrode metal ( 70 ) connected to the drain electrode of the N-type lateral insulated-gate bipolar transistor is connected with a piece of base electrode metal ( 70 ′) connected to the base electrode of the PNP-type high-voltage bipolar transistor by a metal layer.

2. The SOI integratable high-current N-type combined semiconductor device according to claim 1 , wherein, the region ( 1 ) comprises: a first P-type epitaxial layer ( 3 ) arranged on the buried oxide layer ( 2 ); an N-type drift region ( 4 ) arranged on the top-left part of the first P-type epitaxial layer ( 3 ); an N-type buffer trench ( 5 ) arranged on the top-left part of the N-type drift region ( 4 ); a P-type drain region ( 6 ) arranged on the top-left part of the N-type buffer trench ( 5 ), with the drain electrode metal ( 70 ) arranged above the P-type drain region ( 6 ); a field oxide layer ( 8 ) arranged on the silicon surface of the N-type drift region ( 4 ) and connected with the P-type drain region ( 6 ); a gate oxide layer ( 9 ) arranged on the silicon surface between the N-type annular source region ( 11 ) and the field oxide layer ( 8 ); a polysilicon gate ( 10 ) arranged on the gate oxide layer ( 9 ) and extending to the upper surface of the field oxide layer ( 8 ); and, a piece of gate electrode metal ( 71 ) arranged on the polysilicon gate ( 10 ).

3. The SOI integratable high-current N-type combined semiconductor device according to claim 1 , wherein, the region (II) comprises: a second P-type epitaxial layer ( 3 ′) arranged on the buried oxide layer ( 2 ); an N-type triode drift region ( 4 ′) arranged on the top- right part of the second P-type epitaxial layer ( 3 ′); an N-type triode buffer trench ( 5 ′) arranged on the top-right part of the N-type triode drift region ( 4 ′); a P-type emitting region ( 14 ) and an N-type base region ( 15 ) arranged from right to left on the N-type triode buffer trench ( 5 ′); a piece of emitting electrode metal ( 73 ) arranged on the P-type emitting region ( 14 ), with the base electrode metal ( 70 ′) arranged on the N-type base region ( 15 ); a field oxide layer ( 8 ′) arranged on the silicon surface of the N-type triode drift region ( 4 ′) and connected with the N-type base region ( 15 ); a gate oxide layer ( 9 ′) arranged on the silicon surface between the N-type annular source region ( 11 ) and the field oxide layer ( 8 ′); a polysilicon gate ( 10 ′) arranged on the gate oxide layer ( 9 ′) and extending to the upper surface of the field oxide layer ( 8 ′); and, a piece of gate electrode metal ( 71 ′) arranged on the polysilicon gate ( 10 ′).

4. The SOI integratable high-current N-type combined semiconductor device according to claim 1 , wherein, the spacing between the P-type emitting region ( 14 ) and the N-type base region ( 15 ) is 1 μm˜2 μm.

5. The SOI integratable high-current N-type combined semiconductor device according to claim 1 , wherein, a passivation protected oxide layer ( 13 ) is arranged in the non-metal region of the upper surface of the first region ( 1 ) and second region (II) respectively.

6. The SOI integratable high-current N-type combined semiconductor device according to claim 2 , wherein, the spacing between the P-type emitting region ( 14 ) and the N-type base region ( 15 ) is 1 μm˜2 μm.

7. The SOI integratable high-current N-type combined semiconductor device according to claim 2 , wherein, a passivation protected oxide layer ( 13 ) is arranged in the non-metal region of the upper surface of the first region ( 1 ) and second region (II) respectively.

8. The SOI integratable high-current N-type combined semiconductor device according to claim 3 , wherein, the spacing between the P-type emitting region ( 14 ) and the N-type base region ( 15 ) is 1 μm˜2 μm.

9. The SOI integratable high-current N-type combined semiconductor device according to claim 3 , wherein, a passivation protected oxide layer ( 13 ) is arranged in the non-metal region of the upper surface of the first region ( 1 ) and second region (II) respectively.