Solid-state imaging device
In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.
1. A solid-state imaging device comprising:
a pixel array including a plurality of pixels, each including
a photoelectric conversion unit;
a transfer unit configured to transfer signal electric charges of the photoelectric conversion unit to a floating node;
a reset unit configured to set an electric potential of the floating node to a reference electric potential;
an amplifying unit configured to amplify a signal based on the signal electric charges transferred to the floating node; and
a pixel additional circuit configured to process the signal electric charges transferred to the floating node or the signal amplified by the amplifying unit, the pixel additional circuit being provided in addition to the transfer unit, the floating node, the reset unit and the amplifying unit,
wherein the photoelectric conversion unit, the transfer unit, and at least part of the floating node are disposed on a first substrate, and the pixel additional circuit is disposed on a second substrate,
wherein a first light shielding member is disposed on the first substrate, the first light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit,
wherein a second light shielding member is disposed on the second substrate, the second light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit,
wherein the pixel additional circuit included in one pixel of the plurality of pixels includes a first portion and a second portion,
wherein the first portion of the pixel additional circuit is located within a projection region defined by vertically projecting the first light shielding member onto the second substrate, and the second portion of the pixel additional circuit is located outside the projection region,
wherein the first light shielding member reduces light to enter the first portion of the pixel additional circuit located within the projection region and is disposed so as to overlap with the first portion when viewed from a direction along the vertically projecting,
wherein the second light shielding member reduces light to enter the second portion of the pixel additional circuit located outside the projection region and is disposed so as to overlap with the second portion when viewed from the direction along the vertically projecting, and
wherein each of the first light shielding member and the second light shielding member has a higher light shielding performance than an insulating layer.
2. The solid-state imaging device according to claim 1 , wherein the first substrate includes a first semiconductor substrate, and a first insulating film disposed on the first semiconductor substrate,
wherein the second substrate includes a second semiconductor substrate, and a second insulating film disposed on the second semiconductor substrate, and
wherein an electric connection between the first substrate and the second substrate is established by a connection of conductors disposed on the first and second insulating films.
3. The solid-state imaging device according to claim 1 , wherein the pixel additional circuit includes a capacitance for holding the signal electric charges or the signal amplified by the amplifying unit.
4. The solid-state imaging device according to claim 1 , wherein the pixel additional circuit includes a differential amplification circuit.
5. The solid-state imaging device according to claim 1 , wherein the pixel additional circuit has an analog/digital conversion function.
6. The solid-state imaging device according to claim 1 , wherein the pixel additional circuit adds electric charges generated at a plurality of photoelectric conversion units.
7. The solid-state imaging device according to claim 1 , wherein the reset unit and the amplifying unit are disposed on the second substrate.
8. The solid-state imaging device according to claim 1 , wherein a set of the reset unit, the amplifying unit, and the pixel additional circuit is provided for each of a plurality of photoelectric conversion units.
9. A solid-state imaging device comprising:
a pixel array including a plurality of pixels, each including
a photoelectric conversion unit;
a transfer unit configured to transfer signal electric charges of the photoelectric conversion unit to a floating node;
a reset unit configured to set an electric potential of the floating node to a reference electric potential;
an amplifying unit configured to amplify a signal based on the signal electric charges transferred to the floating node; and
a pixel additional circuit configured to process the signal electric charges transferred to the floating node or the signal amplified by the amplifying unit, the pixel additional circuit being provided in addition to the transfer unit, the floating node, the reset unit and the amplifying unit,
wherein the photoelectric conversion unit, the transfer unit, and at least part of the floating node are disposed on a first substrate, and the pixel additional circuit is disposed on a second substrate,
wherein a first light shielding member is disposed on the first substrate, the first light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit,
wherein a second light shielding member is disposed on the second substrate, the second light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit,
wherein the pixel additional circuit included in one pixel of the plurality of pixels includes a first portion and a second portion,
wherein the first portion of the pixel additional circuit is located within a projection region defined by vertically projecting the first light shielding member onto the second substrate, and the second portion of the pixel additional circuit is located outside the projection region,
wherein the first light shielding member reduces light to enter the first portion of the pixel additional circuit located within the projection region, and is disposed so as to overlap with the first portion when viewed from a direction along the vertically projecting,
wherein the second light shielding member reduces light to enter the second portion of the pixel additional circuit located outside the projection region and is disposed so as to overlap with the second portion when viewed from the direction along the vertically projecting,
wherein the first substrate includes a first semiconductor substrate, and a first insulating film disposed on the first semiconductor substrate,
wherein the second substrate includes a second semiconductor substrate, and a second insulating film disposed on the second semiconductor substrate, wherein an electric connection between the first substrate and the second substrate is established by a connection of conductors disposed on the first and second insulating films, wherein the pixel additional circuit includes a capacitance for holding the signal electric charges or the signal amplified by the amplifying unit, and
wherein each of the first light shielding member and the second light shielding member has a higher light shielding performance than the first insulating film and the second insulating film.
10. A solid-state imaging device comprising:
a pixel array including a plurality of pixels, each including
a photoelectric conversion unit;
a transfer unit configured to transfer signal electric charges of the photoelectric conversion unit to a floating node;
a reset unit configured to set an electric potential of the floating node to a reference electric potential;
an amplifying unit configured to amplify a signal based on the signal electric charges transferred to the floating node; and
a pixel additional circuit configured to process the signal electric charges transferred to the floating node or the signal amplified by the amplifying unit, the pixel additional circuit being provided in addition to the transfer unit, the floating node, the reset unit and the amplifying unit,
wherein the photoelectric conversion unit, the transfer unit, and at least part of the floating node are disposed on a first substrate, and the pixel additional circuit is disposed on a second substrate,
wherein a first metal member is disposed on the first substrate,
wherein a second metal member is disposed on the second substrate,
wherein the pixel additional circuit included in one pixel of the plurality of pixels includes a first portion and a second portion,
wherein the first portion of the pixel additional circuit is located within a projection region defined by vertically projecting the first metal member onto the second substrate, and the second portion of the pixel additional circuit is located outside the projection region,
wherein the first metal member is disposed so as to overlap with the first portion of the pixel additional circuit located within the projection region when viewed from a direction along the vertically projecting,
wherein the second metal member is disposed so as to overlap with the second portion of the pixel additional circuit located outside the projection region when viewed from the direction along the vertically projecting, and
wherein the first metal member and the second metal member are disposed in different layers.