Methods, systems and devices for forming nanochannels
Methods of forming at least one nanochannel include: (a) providing a substrate having a thick single or a thick multi-layer overlayer; (b) milling at least one channel through the overlayer into the substrate; then (c) removing the overlayer; and (d) forming at least one nanochannel in the substrate having an average width and depth dimension that is less than about 10 nm in response to the milling and removing steps.
1. A method of forming at least one nanochannel, comprising:
providing a substrate having a thick single overlayer or a thick multi-layer overlayer;
milling at least one channel through the overlayer into the substrate; and
removing the overlayer to
expose at least one nanochannel in the substrate in response to the milling and removing steps.
2. The method of claim 1 , wherein the milling at least one channel through the overlayer into the substrate is carried out to mill a plurality of channels through the overlayer and into the substrate before the removing step, wherein the removing step exposes a plurality of nanochannels as the at least one nanochannel, and wherein the nanochannels have an average width and/or depth that is less than about 10 nm.
3. The method of claim 1 , wherein the milling and removing steps are carried out to form a plurality of nanochannels in the substrate as the at least one nanochannel, the nanochannels having a width and/or depth that is less than about 5 nm.
4. The method of claim 1 , wherein the milling and removing steps are carried out to form a plurality of nanochannels in the substrate, the nanochannels having a depth that is between about 1 nm to about 3 nm and/or a width that is between about 1 nm to about 10 nm.
5. The method of claim 1 , wherein the substrate is a substantially planar substrate and comprises a soft material having a Young's Modulus that is between about 0.1-3000 MPa.
6. The method of claim 1 , wherein the substrate is a substantially planar substrate and comprises a substantially rigid material.
7. The method of claim 1 , wherein the overlayer comprises a conductive material with a low sputtering rate of between about 0.05 to about 0.5 μm 3 /nC or less.
8. The method of claim 1 , wherein the overlayer comprises a metallic film.
9. The method of claim 1 , wherein the overlayer is between about 50 nm and 500 nm thick.
10. The method of claim 1 , wherein the milling step is carried out using focused ion beam (FIB) milling.
11. The method of claim 1 , wherein the substrate comprises an elastomeric material, and wherein the method further comprises:
stretching the elastomeric material substrate during the milling step; then
releasing the elastomeric material substrate to a non-stretched configuration to reduce a width dimension of the at least one nanochannel.
12. The method of claim 11 , wherein the stretching is carried out to stretch the elastomeric material between about 10-30%.
13. The method of claim 1 , wherein the at least one nanochannel has a smooth inner surface.
14. The method of claim 1 , wherein the overlayer has multiple stacked layers, including a first layer attached to the substrate of a first material, and a second layer of a different second material attached to and residing above the first layer, the second layer comprising a conductive film.
15. The method of claim 1 , wherein the substrate comprises an electrically insulating material and the overlayer comprises a metallic film.
16. The method of claim 1 , wherein the overlayer comprises an electrically insulating material and the substrate comprises a conductive material.
17. The method of claim 1 , further comprising heating the substrate after the removing step to a temperature sufficient to cause at least a lower portion of the at least one nanochannel to increase in width while decreasing the depth of the at least one nanochannel.
18. The method of claim 1 , wherein the substrate comprises quartz, wherein the milling step is carried out using focused ion beam (FIB) milling configured to deposit Ga + ions in the quartz proximate the at least one nanochannel, and wherein the method further comprises heating the substrate to a temperature between about 850 degrees Celsius and less than 1200 degrees Celsius to cause the quartz proximate the at least one nanochannel to flow within a region associated with the Ge ions to create a respective nanochannel having a wider channel dimension and a more shallow depth dimension.
19. A method of forming a fluidic analysis device, comprising:
providing a substrate having a single sacrificial overlayer or a thick multi-layer sacrificial overlayer, wherein the sacrificial overlayer has a thickness that is between 50 nm and 500 nm;
focused ion beam (FIB) milling through the overlayer into the substrate to form a plurality of channels through the overlayer and into the substrate with a cumulative width and/or depth dimension associated with the overlayer and substrate that is greater than 50 nm; and
removing the sacrificial overlayer from the substrate to expose nanochannels in the substrate formed by the FIB milling through the overlayer.
20. The method of claim 19 , wherein the sacrificial overlayer is bonded to the substrate for the milling step and comprises a conductive material with a low sputtering rate that is between 0.05 to 0.5 μm 3 /nC.
21. The method of claim 19 , wherein the FIB milling is carried out using a Ga + beam.
22. The method of claim 19 , further comprising attaching a cover to the substrate after the removing step to provide a fluidic analysis device for DNA transport studies.
23. The method of claim 19 , wherein the nanochannels in the substrate have a width that is between one or more of the following:
3-5 nm, 7-9 nm, 10-12 nm, 12-15 nm, 18-20 nm, 20-22 nm, 27-29 nm, or 35-38 nm.