Substrate including a dam for semiconductor package, semiconductor package using the same, and manufacturing method thereof
View Patent ↗A substrate for a semiconductor package includes a substrate body having a first surface and a second surface which faces away from the first surface, and formed with at least one bump land on the first surface, and a dam formed and projected over an edge of the first surface of the substrate body, and having an underfill member discharge unit.
1. A substrate for a semiconductor package, comprising:
a substrate body having a first surface and a second surface which faces away from the first surface, and formed with at least one bump land on the first surface; and
a dam formed on the first surface of the substrate body and projected over an edge of the first surface of the substrate body, and the dam having an underfill member discharge unit,
wherein the at least one bump land is in direct contact with the first surface of the substrate body and the at least one bump land is located within the first surface of the substrate body, and
wherein the underfill member discharge unit is configured to prevent an underfill member from overflowing over the dam.
2. The substrate according to claim 1 , wherein the dam comprises a plurality of dams, and the underfill member discharge unit comprises a plurality of gaps each of which is defined between two adjacent dams.
3. The substrate according to claim 1 , wherein the dam comprises a plurality of dams, and the underfill member discharge unit comprises a slit which is defined between two adjacent dams.
4. The substrate according to claim 1 , wherein the dam comprises a plurality of dams, and the underfill member discharge unit comprises a discharge hole which is defined to penetrate a portion of the dam.
5. A semiconductor package comprising:
a substrate including a substrate body having a first surface and a second surface which faces away from the first surface, and formed with at least one bump land on the first surface, and a dam formed on the first surface of the substrate body and projected over an edge of the first surface of the substrate body, and the dam having an underfill member discharge unit; and
a first semiconductor chip having a third surface which faces the first surface and a fourth surface which faces away from the third surface, the third surface formed with a bump corresponding to the bump land on the first surface, and bonded to the substrate,
wherein the at least one bump land is in direct contact with the first surface of the substrate body and the at least one bump land is located within the first surface of the substrate body, and
wherein the underfill member discharge unit is configured to prevent an underfill member from overflowing over the dam.
6. The semiconductor package according to claim 5 , wherein the dam comprises a plurality of dams, and the underfill member discharge unit comprises any one of a plurality of gaps each of which is defined between two adjacent dams or a slit which is defined between two adjacent dams.
7. The semiconductor package according to claim 5 , wherein the dam comprises a plurality of dams, and the underfill member discharge unit comprises a discharge hole which is defined to penetrate a portion of the dam.
8. The semiconductor package according to claim 5 , wherein the dam has a height that is less than a height of the fourth surface and greater than a vertical space between the third surface and the second surface.
9. The semiconductor package according to claim 5 , wherein an inside space surrounded by the dam has a size greater than or equal to that of the first semiconductor chip.
10. The semiconductor package according to claim 5 , further comprising:
an underfill member interposed between the substrate and the first semiconductor chip.
11. A semiconductor package comprising:
a substrate including a substrate body which has a first surface and a second surface facing away from the first surface, is formed with one or more bump lands on the first surface and is defined with a discharge opening penetrating the first surface and the second surface, and a dam which is formed on the first surface of the substrate body and projected over an edge of the first surface of the substrate body; and
a semiconductor chip having a third surface which faces the first surface and a fourth surface which faces away from the third surface, the third surface formed with bumps corresponding to the bump lands on the first surface, and bonded to the substrate,
wherein the dam includes an underfill member discharge unit,
wherein the at least one bump land is in direct contact with the first surface of the substrate body and the at least one bump land is located within the first surface of the substrate body, and
wherein the underfill member discharge unit is configured to prevent an underfill member from overflowing over the dam.
12. The semiconductor package according to claim 11 , wherein the dam has a height that is less than a height of the fourth surface and greater than a vertical space between the third surface and the substrate.
13. The semiconductor package according to claim 11 , further comprising:
an underfill member interposed between the substrate and the semiconductor chip.
14. The semiconductor package according to claim 11 , wherein an inside space surrounded by the dam has a size greater than or equal to that of the semiconductor chip.
15. A semiconductor package comprising:
a substrate including a substrate body which has a first surface and a second surface facing away from the first surface, is formed with one or more bump lands on the first surface, and a dam which is formed on the first surface of the substrate body and projecting over a perimeter of the first surface of the substrate body; and
a semiconductor chip having a third surface facing the first surface and a fourth surface facing away from the third surface, the third surface located closer to the first surface than the fourth surface, the third surface formed with bumps corresponding to the bump lands on the first surface, and bonded to the substrate,
wherein the dam includes an underfill member discharge unit, and
wherein the underfill member discharge unit is defined by the dam and is configured to prevent an underfill member from overflowing over the dam.
16. The semiconductor package according to claim 15 , wherein the dam forms the perimeter and the semiconductor chip is located over the substrate and within the perimeter formed by the dam.
17. The semiconductor package according to claim 15 , wherein the dam extends from the perimeter of the first surface and the one or more bump lands are located within the perimeter of the first surface.
18. The semiconductor package according to claim 17 , wherein the one or more bump lands are formed within the first surface of the substrate.