Low CTE interposer without TSV structure

1. A microelectronic assembly, comprising:

a dielectric region having a first surface, a second surface opposite the first surface, and a plurality of traces extending in at least one direction parallel to the first and second surfaces and a plurality of contacts at the first surface of the dielectric region;

a plurality of electrically conductive elements coupled to the traces and projecting above the second surface;

an encapsulant extending above the second surface, the encapsulant filling spaces between adjacent conductive elements and having a surface overlying and facing away from the second surface, wherein ends of the conductive elements are at the surface of the encapsulant;

a microelectronic element having a face and a plurality of element contacts at the face, the element contacts facing and joined to the plurality of contacts,

wherein the encapsulant has a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element.

2. The microelectronic assembly of claim 1 , wherein the encapsulant is a first encapsulant, the microelectronic assembly further comprising:

a second encapsulant extending above the first surface and between the first surface and the face of the microelectronic element.

3. The microelectronic assembly of claim 2 , wherein the second encapsulant has a CTE equal to a CTE of the first encapsulant.

4. The microelectronic assembly of claim 2 , wherein the first and second encapsulants encapsulate the dielectric region.

5. The microelectronic assembly of claim 1 , wherein the microelectronic element comprises at least two microelectronic elements spaced apart in the at least one direction parallel to the first surface.

6. The microelectronic assembly of claim 1 , wherein the dielectric region includes a first layer of a first dielectric material and a second layer of a different dielectric material configured to function as a process stop layer.

7. The microelectronic assembly of claim 1 , wherein the plurality of electrically conductive elements includes at least one mass of bonding material selected from the group consisting of solder, tin, indium, copper, nickel, gold, eutectic compositions, non-eutectic compositions, and an electrically conductive matrix material.

8. The microelectronic assembly of claim 1 , wherein the plurality of electrically conductive elements includes a plurality of metal posts having at least a core consisting essentially of at least one metal selected from copper, copper alloy, nickel and nickel alloy, the posts having a melting temperature higher than 300° C.

9. The microelectronic assembly of claim 1 , further comprising a circuit panel, wherein the plurality of conductive elements is joined with corresponding contacts at a surface of the circuit panel.

10. The microelectronic assembly of claim 1 , wherein the dielectric region is selected from a group consisting of a Back End of Line layer (BEOL) and a redistribution layer (RDL).

11. A system comprising a microelectronic assembly according to claim 1 and one or more other electronic components electrically connected to the structure.

12. A system as claimed in claim 11 further comprising a housing, said microelectronic assembly and said other electronic components being mounted with said housing.

13. The microelectronic assembly of claim 1 , wherein the face of the microelectronic element overlies the first surface of the dielectric region, and the element contacts at the face of the microelectronic element are joined to the plurality of contacts with a bond metal.

14. An interposer, comprising:

a dielectric region having a first surface, a second surface opposite the first surface, and a plurality of traces extending in at least one direction parallel to the first and second surfaces and a plurality of contacts at the first surface of the dielectric region configured to be joined by flip-chip connection with corresponding element contacts of a microelectronic element, such as with a bond metal therebetween;

a plurality of electrically conductive elements coupled to the traces and projecting above the second surface;

an encapsulant extending above the second surface, the encapsulant filling spaces between adjacent conductive elements and having a surface overlying and facing away from the second surface, wherein ends of the conductive elements are at the surface of the encapsulant,

wherein the encapsulant has a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least the dielectric region or the microelectronic element.

15. The interposer of claim 14 , wherein the second encapsulant has a CTE equal to a CTE of the first encapsulant.

16. The interposer of claim 14 , wherein the dielectric region includes a first layer of a first dielectric material and a second layer of a different dielectric material configured to function as a process stop layer.

17. The interposer of claim 14 , wherein the plurality of electrically conductive elements includes at least one mass of bonding material selected from the group consisting of solder, tin, indium, copper, nickel, gold, eutectic compositions, non-eutectic compositions, and an electrically conductive matrix material.

18. The interposer of claim 14 , wherein the plurality of electrically conductive elements includes a plurality of metal posts having at least a core consisting essentially of at least one metal selected from copper, copper alloy, nickel and nickel alloy, the posts having a melting temperature higher than 300° C.

19. The interposer of claim 13 , wherein the dielectric region is selected from a group consisting of a Back End of Line layer (BEOL) and a redistribution layer (RDL).