Plasma processing apparatus
View Patent ↗The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1 , means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1 , an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5 A, wherein at least two kinds of processing gases having different composition ratios of O 2 or N 2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
1. A plasma processing apparatus comprising:
a processing chamber,
a shower plate for supplying processing gas into the processing chamber,
a gas dispersion plate for dispersing the gas which is fed to the shower plate,
a gas supply means for feeding processing gas to the gas dispersion plate,
an evacuation means for decompressing the processing chamber, and
a radio frequency power supply for supplying RF power which generates plasma into the processing chamber;
wherein:
the gas dispersion plate is divided into an inner area and an outer area,
the gas supply means includes a first gas supply source; a second gas supply source; a first gas flow controller for controlling a flow rate of a gas supplied from the first gas supply source; a second gas flow controller for controlling a flow rate of a gas supplied from the second gas supply source; a first gas distribution means for branching a gas supplied from the first gas flow controller at a predetermined gas flow ratio; a second gas distribution means for branching a gas supplied from the second gas flow controller at a predetermined gas flow ratio; a first gas junction portion in which one gas branched at the predetermined gas flow ratio via the first gas distribution means and one gas branched at the predetermined gas flow ratio via the second gas distribution means join together; a second pas junction portion in which the other gas branched at the predetermined gas flow ratio via the first gas distribution means and the other gas branched at the predetermined gas flow ratio via the second gas distribution means join together; a first gas pipe for supplying a gas from the first gas junction portion to the inner area of the gas dispersion plate; and a second gas pipe for supplying a gas from the second gas junction portion to the outer area of the gas dispersion plate, and
wherein the shower plate has an inner area which supplies a gas supplied from the inner area of the gas dispersion plate into the processing chamber, and an outer area which supplies a gas supplied from the outer area of the gas dispersion plate into the processing chamber.
2. The plasma processing apparatus according to claim 1 , wherein the apparatus further comprises:
a magnetic field generation means for generating a magnetic field in the processing chamber.
3. The plasma processing apparatus according to claim 1 , wherein:
the radio frequency power supply is capable of supplying RF power respectively to an inner area of an antenna and an outer area of the antenna via a distributor.
4. The plasma processing apparatus according to claim 1 , wherein the first gas distribution means has a gas distributor.
5. The plasma processing apparatus according to claim 1 , wherein the first gas distribution means and the second gas distribution means have a gas distributor.
6. The plasma processing apparatus according to claim 1 , further comprising:
an O-ring for separating the gas dispersion plate into plural areas.