Memory cell device and method of manufacture

1. A memory cell, comprising:

an anode electrode comprising a layer of an inorganic intercalating material and at least a first metal species dispersed in the inorganic intercalating material;

a cathode electrode; and

a solid state electrolyte formed between the anode and cathode electrodes, wherein the solid state electrolyte is programmable between different resistance values by electric pulsing.

2. The memory cell of claim 1 , wherein:

the anode electrode comprises titanium.

3. The memory cell of claim 1 , wherein:

the anode electrode comprises copper.

4. The memory cell of claim 1 , wherein:

the anode electrode comprises copper and titanium.

5. The memory cell of claim 1 , wherein:

the layer of intercalating material has a thickness in the range of about 30 nm to 100 nm.

6. The memory cell of claim 1 , wherein:

the cathode electrode comprises titanium.

7. The memory cell of claim 1 , wherein:

the cathode electrode comprises a material selected from the group of: W, TiN, TiW, and TiA1N.

8. An integrated circuit device, comprising:

a plurality of memory cells, each memory cell comprising a cathode electrode, a solid electrolyte layer, and

an anode electrode that includes an inorganic intercalating material, and

a first metal species dispersed in the inorganic intercalating material; wherein

each memory cell is switchable between different resistance values by bipolar electric pulsing.

9. The integrated circuit device of claim 8 , wherein:

the anode electrode of each memory cell comprises titanium.

10. The integrated circuit device of claim 8 , wherein:

the anode electrode of each memory cell comprises copper.

11. The integrated circuit device of claim 8 , wherein:

the anode electrode of each memory cell comprises copper and titanium.

12. The integrated circuit device of claim 8 , wherein:

the memory cells are arranged between bit lines and word lines.