Pedestal construction with low coefficient of thermal expansion top
A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly onto the application substrate, an insulation layer disposed onto the heater layer, and a second substrate disposed onto the insulation layer. The heater layer is directly disposed onto the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer.
1. A support assembly for use in semiconductor processing comprising:
an application substrate;
a heater layer disposed directly onto the application substrate by a layered process selected from a group consisting of thick film, thin film, thermal spray and sol-gel processes such that the heater layer is in direct contact with the application substrate;
an insulation layer disposed onto the heater layer; and
a second substrate disposed onto the insulation layer, the second substrate including a base portion and a peripheral portion surrounding the base portion and extending vertically and upwardly from the base portion,
wherein the application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer, the application substrate functioning as an interface to be bonded to a heating substrate by a thermal process, and
wherein a top surface of the peripheral portion of the second substrate is lower than a top surface of the application substrate and is exposed from the top surface of the application substrate such that a step is defined between the top surface of the application substrate and the top surface of the peripheral portion of the second substrate.
2. The support assembly according to claim 1 , wherein the application substrate is an aluminum-silicon alloy.
3. The support assembly according to claim 1 , wherein the application substrate defines an upper surface onto which the heating substrate is placed during processing, the upper surface having a chemically isolating layer between the application substrate and the heating substrate.
4. The support assembly according to claim 3 , wherein the chemically isolating layer is selected from the group consisting of a thermally sprayed ceramic material, a thin film deposited ceramic material, a conversion coating, and an adhesively bonded sintered ceramic component.
5. The support assembly according to claim 1 , wherein the thermal bonding process is selected from the group consisting of MIG, TIG, laser, electron beam welding, brazing, diffusion bonding, and adhesive bonding.
6. The support assembly according to claim 1 , wherein the application substrate defines an Osprey™ Controlled Expansion (CE) alloy.
7. The support assembly according to claim 6 , wherein the application substrate has a variable composition such that the coefficient of thermal expansion of the application substrate matches that of the heater layer.
8. The support assembly according to claim 1 , wherein the application substrate includes a chemically isolating layer.
9. The support assembly according to claim 1 , wherein the application substrate includes a metallic layer and a chemically isolating layer on the metallic layer.
10. The support assembly according to claim 1 , wherein the second substrate is a gas-distributing substrate for providing a purging gas.
11. The support assembly according to claim 1 , wherein the second substrate is a cooling substrate for cooling the application substrate.
12. The support assembly according to claim 1 , further comprising a pedestal connected to the second substrate.
13. The support assembly according to claim 12 , further comprising a gas conduit received in the pedestal to provide purge gas to the second substrate.
14. The support assembly according to claim 12 , further comprising a vacuum conduit received in the pedestal.
15. The support assembly according to claim 1 , wherein the application substrate defines a plurality of vacuum clamping channels.
16. The support assembly according to claim 1 , wherein the application substrate defines lift pin holes for receiving proximity pins.
17. The support assembly according to claim 16 , wherein the proximity pins are movable to support a wafer and to place the wafer on the application substrate.
18. A support assembly for use in semiconductor processing comprising:
a tubular pedestal;
a gas-distributing substrate connected to the tubular pedestal, the gas-distributing substrate including a base portion and a peripheral portion surrounding the base portion and extending vertically and upwardly from the base portion;
a heater layer provided on the gas-distributing substrate by a layered process selected from a group consisting of thick film, thin film, thermal spray, and sol-gel processes for heating a wafer; and
an application substrate disposed on the heater layer and including an Osprey™ Controlled Expansion (CE) alloy that has a variable composition with a coefficient of thermal expansion compatible with that of the heater layer, the application substrate functioning as an interface to be bonded to a heating substrate by a thermal process,
wherein a top surface of the peripheral portion of the gas-distributing substrate is lower than a top surface of the application substrate and is exposed from the top surface of the application substrate such that a step is defined between the top surface of the application substrate and the top surface of the peripheral portion of the gas-distributing substrate.
19. The support assembly according to claim 18 , further comprising a gas conduit received in the pedestal for supplying a purge gas to the gas-distributing substrate.