Secure non-volatile memory
A secure memory includes a bistable memory cell having a programmed start-up state, and means for flipping the state of the cell in response to a flip signal. The memory may include a clock for generating the flip signal with a period, for example, smaller than the acquisition time of an emission microscope.
1. A memory comprising:
a bistable memory cell having a programmed start-up state; and
logic configured to commence periodically flipping of a state of the memory cell based on whether a reading threshold period of time has elapsed since a start-up of the memory.
2. The memory of claim 1 wherein the logic comprises a clock configured to generate a flip signal to trigger a flip of the state of the memory cell.
3. The memory of claim 2 wherein the clock has a period of less than 20 ns.
4. The memory of claim 1 wherein the memory cell comprises first and second cross-coupled inverting elements having transistors with substantially similar physical dimensions, with at least one transistor of the first inverting element having an operating characteristic different from an operating characteristic of a corresponding transistor of the second inverting element.
5. The memory of claim 4 wherein the operating characteristic is a threshold voltage.
6. The memory of claim 1 wherein the memory cell comprises first and second cross-coupled inverting elements having transistors with substantially similar physical dimensions, with at least two transistors of the first inverting element having an operating characteristic different from an operating characteristic of corresponding transistors of the second inverting element.
7. The memory of claim 2 further comprising a divider configured to generate a signal indicative of a parity of the flip signal.
8. The memory of claim 1 wherein the memory cell is one of a plurality of bistable memory cells having programmed start-up states and the logic is configured to periodically flip states of each memory cell of the plurality of memory cells.
9. The memory of claim 1 wherein the reading threshold period of time is less than a second.
10. The memory of claim 1 wherein the logic is configured to:
store a state of the bistable memory cell in response to an active state of a flip signal; and
write a complement of a state of the flip-flop into the bistable memory cell in response to the active state of the flip signal.
11. A system, comprising:
one or more processors; and
a memory having:
a plurality of bistable memory cells having programmed start-up states; and
logic configured to commence periodically flipping states of the plurality of bistable memory cells based on whether a reading threshold period of time has elapsed since a start-up of the memory.
12. The system of claim 11 wherein the logic comprises a clock configured to generate a flip signal to trigger flipping of the states of the bistable memory cells.
13. The system of claim 11 wherein the bistable memory cells each comprise first and second cross-coupled inverting elements having transistors with substantially similar physical dimensions, with at least one transistor of the first inverting element having an operating characteristic different from an operating characteristic of a corresponding transistor of the second inverting element.
14. The system of claim 11 wherein the logic is configured to:
store a state of a bistable memory cell of the plurality in response to an active state of a flip signal; and
write a complement of a state of the flip-flop into the bistable memory cell in response to the active state of the flip signal.
15. The system of claim 12 further comprising a divider configured to generate a signal indicative of a parity of the flip signal.
16. A method, comprising:
reading a state of a bistable memory cell of a memory; and
based on whether a reading threshold period of time has elapsed since a start-up of the memory, commencing periodic flipping of the state of the bistable memory cell.
17. The method of claim 16 wherein the periodically flipping the state of the bistable memory cell comprises generating a clock signal.
18. The method of claim 17 , further comprising re-reading a state of the bistable memory cell.
19. The method of claim 18 , further comprising compensating for the periodically flipping of the state of the bistable memory cell.
20. The method of claim 19 wherein the compensating comprises determining a parity of the clock signal.
21. The method of claim 16 wherein,
the reading the state of the bistable memory cell of the memory comprises applying a reset signal to the bistable memory cell and reading an output of the bistable memory cell after the output of the bistable memory cell stabilizes at a programmed state; and
the periodically flipping the state of the bistable memory cell comprising applying a periodic flip signal to the bistable memory cell instead of the reset signal.
22. A system, comprising:
means for reading a state of a bistable memory cell; and
means for commencing periodic flipping of the state of the bistable memory cell based on whether a reading threshold period of time has elapsed since a start-up of the system.
23. The system of claim 22 , further comprising:
means for programming the state of the bistable memory cell at the start-up of the system.
24. The system of claim 22 , further comprising:
means for compensating for periodic flipping of the state of the bistable memory cell.
25. The memory of claim 1 wherein the memory has a programmed start-up state storing start-up information of a system.
26. The memory of claim 1 wherein the memory is a non-volatile memory storing system start-up information.