Power switching module with reduced oscillation
A power switching module includes a three-terminal power semiconductor device designed for a rated current and a freewheeling unit. The freewheeling unit includes a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap that is larger than the first band-gap. The Schottky-diode is electrically connected in parallel to the pn-diode.
1. A power switching module, comprising:
a three-terminal power semiconductor device designed for a rated current; and
a freewheeling unit comprising a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap, wherein the second band gap is larger than the first band-gap, wherein the Schottky-diode is electrically connected in parallel to the pn-diode, and
wherein the pn-diode is operable to have a reverse peak current at the rated current of the power semiconductor device which is from about 0.5 to about 1.8 of a capacitive current peak of the Schottky-diode.
2. The power switching module according to claim 1 , wherein the three-terminal power semiconductor device is an insulated gate bipolar transistor.
3. The power switching module according to claim 2 , wherein the freewheeling unit is connected anti-parallel to the insulated gate bipolar transistor.
4. The power switching module according to claim 1 , wherein the first semiconductor material is silicon.
5. The power switching module according to claim 1 , wherein the second semiconductor material is silicon carbide.
6. The power switching module according to claim 1 , wherein the pn-diode comprises a pn-junction formed by a p-doped region and an n-doped region, and wherein the p-doped region comprises a higher density of recombination centers than the n-doped region.
7. The power switching module according to claim 6 , wherein the recombination centers are formed by implanted helium ions.
8. The power switching module according to claim 6 , wherein the recombination centers are formed by at least one of gold doping and platinum doping.
9. The power switching module according to claim 1 , wherein the freewheeling unit further comprises an inductor which is connected in series with the pn-diode.
10. The power switching module according to claim 1 , wherein the pn-diode comprises a pn-junction formed by a p-doped anode region and an n-doped drift region, wherein a highly p-doped region integrated in the p-doped anode region has a higher doping concentration than the p-doped anode region.
11. The power switching module according to claim 1 , wherein the pn-diode has a total pn-junction area and the Schottky-diode has a total Schottky junction area, and wherein a ratio between the total pn-junction area and the total Schottky junction area is from about 0.08 to about 0.3.
12. The power switching module according to claim 1 , wherein the pn-diode and the three-terminal power semiconductor device are integrated into a single semiconductor body.
13. The power switching module according to claim 1 , further comprising:
a first bond wire electrically connected with the Schottky-diode; and
a second bond wire electrically connected with the pn-diode,
wherein a length of the first bond wire is from about 30% to about 200% of a length of the second bond wire.
14. The power switching module according to claim 1 , further comprising:
a common conductive lead-structure which is electrically connected to a collector metallization of the power semiconductor device and to a cathode metallization of the Schottky-diode to form a common collector terminal of the power switching module.
15. A power switching module, comprising:
a three-terminal power semiconductor device; and
a freewheeling unit comprising a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap, wherein the second band-gap is larger than the first band-gap, wherein the Schottky-diode is electrically connected in parallel to the pn-diode,
wherein the pn-diode has a total pn-junction area,
wherein the Schottky-diode has a total Schottky junction area,
wherein a ratio between the total pn-junction area and the total Schottky-junction area is from about 0.08 to about 0.3, and
wherein a ratio between a current through the pn-diode and a current through the Schottky-diode is from about 0.05 and 0.25 for a given total current through the pn-diode and the Schottky-diode.
16. The power switching module according to claim 15 , wherein the three-terminal power semiconductor device is an insulated gate bipolar transistor.
17. The power switching module according to claim 16 , wherein the freewheeling unit is connected anti-parallel to the insulated gate bipolar transistor.
18. The power switching module according to claim 15 , wherein the pn-diode comprises a pn-junction formed by a p-doped region and an n-doped region, and wherein the p-doped region comprises recombination centers.
19. The power switching module according to claim 15 , wherein the freewheeling unit further comprises an inductor which is connected in series with the pn-diode.
20. The power switching module according to claim 15 , wherein the pn-diode comprises a pn-junction formed by a p-doped anode region and an n-doped drift region, wherein a highly p-doped region integrated in the p-doped anode region has a higher doping concentration than the p-doped anode region.
21. A power switching module, comprising:
a three-terminal power semiconductor device; and
a freewheeling unit comprising a pn-diode integrated in a first semiconductor material having a first band-gap, an inductor electrically connected in series with the pn-diode, and a Schottky-diode integrated in a second semiconductor material having a second band-gap, wherein the second band gap is larger than the first band-gap, and wherein the Schottky-diode is electrically connected in parallel to the pn-diode and the inductor.
22. The power switching module according to claim 21 , wherein the pn-diode has a total pn-junction area and the Schottky-diode has a total Schottky-junction area, and wherein a ratio between the total pn-junction area and the total Schottky-junction area is from about 0.08 to about 0.3.
23. The power switching module according to claim 21 , wherein the three-terminal power semiconductor device is an insulated gate bipolar transistor.
24. The power switching module according to claim 23 , wherein the freewheeling unit is connected anti-parallel to the insulated gate bipolar transistor.
25. The power switching module according to claim 21 , wherein the pn-diode comprises a pn-junction formed by a p-doped region and an n-doped region, and wherein the p-doped region comprises recombination centers.
26. The power switching module according to claim 21 , wherein the pn-diode comprises a pn-junction formed by a p-doped anode region and an n-doped drift region, wherein an n-doped anode region that has a higher doping concentration than the n-doped drift region provides an ohmic contact between a cathode metallization and the n-doped drift region.