IP Library Granted Patent US 9,246,298
Granted Patent B2
US 9,246,298 · App. 13/840,736 · Granted Jan 26, 2016

Corrosion resistant electrodes for laser chambers

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,246,298
App. No.
13/840,736
Granted
Jan 26, 2016
Kind
B2
Abstract

Corrosion resistant electrodes are formed of brass that has been doped with phosphorus. The electrodes are formed of brass that contains about 100 ppm to about 1,000 ppm of phosphorus, and the brass has no visible microporosity at a magnification of 400×. The brass may be cartridge brass that contains about 30 weight percent of zinc and the balance copper. Corrosion resistant electrodes also may be formed by subjecting brass to severe plastic deformation to increase the resistance of the brass to plasma corrosion. The corrosion resistant electrodes can be used in laser systems to generate laser light.

Claims (31)

1. A laser system, comprising:

a chamber;

a cathode disposed within the chamber, the cathode having an elongated cathode surface; and

an anode disposed within the chamber, the anode having an elongated anode surface that faces the elongated cathode surface, a space between the elongated anode surface and the elongated cathode surface defining a discharge area within the chamber, the anode being formed of brass that contains about 100 ppm to about 1,000 ppm of phosphorus, wherein the brass has less than 30 inclusions per mm 2 and each inclusion has a diameter that does not exceed about 5 microns, and the brass exhibits increased resistance to plasma corrosion relative to cartridge brass that has not been doped with phosphorus.

2. The laser system of claim 1 , wherein the brass contains about 120 ppm to about 370 ppm of phosphorus.

3. The laser system of claim 2 , wherein the brass is cartridge brass that contains 29. 7 weight percent to 30.3 weight percent of zinc and the balance copper.

4. The laser system of claim 3 , wherein a total amount of impurities in the cartridge brass is less than 100 ppm.

5. The laser system of claim 1 , wherein the anode is movably disposed within the chamber.

6. A laser system, comprising:

a chamber;

a cathode disposed within the chamber, the cathode having an elongated cathode surface, the cathode being formed of brass that contains about 100 ppm to about 1,000 ppm of phosphorus, the brass having no visible microporosity at a magnification of 400×, and the brass exhibiting increased resistance to plasma corrosion relative to cartridge brass that has not been doped with phosphorus; and

an anode disposed within the chamber, the anode having an elongated anode surface that faces the elongated cathode surface, a space between the elongated anode surface and the elongated cathode surface defining a discharge area within the chamber.

7. The laser system of claim 6 , wherein the brass contains about 120 ppm to about 370 ppm of phosphorus.

8. The laser system of claim 7 , wherein the brass is cartridge brass that contains 29. 7 weight percent to 30.3 weight percent of zinc and the balance copper.

9. The laser system of claim 8 , wherein a total amount of impurities in the cartridge brass is less than 100 ppm.

10. A laser system, comprising:

a chamber;

a cathode disposed within the chamber, the cathode having an elongated cathode surface; and

an anode disposed within the chamber, the anode having an elongated anode surface that faces the elongated cathode surface, a space between the elongated anode surface and the elongated cathode surface defining a discharge area within the chamber, the anode being formed of a material consisting essentially of 29. 7 weight percent to 30.3 weight percent of zinc, 120 ppm to 370 ppm of phosphorus, less than 100 ppm of impurities, and the balance copper, wherein the material has no visible microporosity at a magnification of 400×, and the material exhibits increased resistance to plasma corrosion relative to cartridge brass that has not been doped with phosphorus.

11. The laser system of claim 10 , wherein the anode is movably disposed within the chamber.

12. A laser system, comprising:

a chamber;

a cathode disposed within the chamber, the cathode having an elongated cathode surface, and the cathode being formed of a material consisting essentially of 29. 7 weight percent to 30.3 weight percent of zinc, 120 ppm to 370 ppm of phosphorus, less than 100 ppm of impurities, and the balance copper, wherein the material has no visible microporosity at a magnification of 400×, and the material exhibits increased resistance to plasma corrosion relative to cartridge brass that has not been doped with phosphorus; and

an anode disposed within the chamber, the anode having an elongated anode surface that faces the elongated cathode surface, a space between the elongated anode surface and the elongated cathode surface defining a discharge area within the chamber.

13. A laser system, comprising:

a chamber;

a cathode disposed within the chamber, the cathode having an elongated cathode surface; and

an anode disposed within the chamber, the anode having an elongated anode surface that faces the elongated cathode surface, a space between the elongated anode surface and the elongated cathode surface defining a discharge area within the chamber, the anode being formed of brass that contains about 100 ppm to about 1,000 ppm of phosphorus, the brass having no visible microporosity at a magnification of 400×, and the elongated anode surface exhibits increased resistance to plasma corrosion relative to cartridge brass that has not been doped with phosphorus.

14. The laser system of claim 13 , wherein the brass contains about 120 ppm to about 370 ppm of phosphorus.

15. The laser system of claim 14 , wherein the brass is cartridge brass that contains 29. 7 weight percent to 30.3 weight percent of zinc and the balance copper.

16. The laser system of claim 15 , wherein a total amount of impurities in the cartridge brass is less than 100 ppm.

Assignments (2)
MERGER Recorded Mar 14, 2014
From: CYMER, INC.
To: CYMER, LLC
Reel/Frame 032445/0511 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2013
From: KARDOKUS, JANINE; DUFFEY, THOMAS P.; PARTLO, WILLIAM N.
To: CYMER, INC.
Reel/Frame 031358/0781 →