Electro-optic device having nanowires interconnected into a network of nanowires
An electro-optic device includes a first electrode, an active layer formed over and electrically connected with the first electrode, a buffer layer formed over and electrically connected with the active layer, and a second electrode formed directly on the buffer layer. The second electrode includes a plurality of nanowires interconnected into a network of nanowires. The buffer layer provides a physical barrier between the active layer and the plurality of nanowires to prevent damage to the active layer while the second electrode is formed.
1. An electro-optic device, comprising:
a first electrode;
an active layer formed over and electrically connected with said first electrode;
a buffer layer formed over and electrically connected with said active layer; and
a second electrode formed directly on said buffer layer,
wherein said second electrode comprises a plurality of nanowires interconnected into a network of nanowires,
wherein said buffer layer provides a physical barrier between said active layer and said plurality of nanowires to prevent damage to said active layer while said second electrode is formed.
2. An electro-optic device according to claim 1 , wherein said buffer layer at least 1 nm thick.
3. An electro-optic device according to claim 1 , wherein said buffer layer at least 1 nm thick and less than 1000 nm thick.
4. An electro-optic device according to claim 3 , wherein said buffer layer at least 30 nm thick and less than 51 nm thick.
5. An electro-optic device according to claim 1 , wherein said plurality of nanowires interconnected into said network of nanowires have electrically connected junctions at overlapping nanowire portions and define spaces void of said nanowires, and
wherein said second electrode further comprises a plurality of nanoparticles disposed to at least partially fill a plurality of said spaces to provide additional electrically conducting pathways for said network of nanowires across said spaces, and
wherein said plurality of nanoparticles are at least one of electrically conducting or semiconducting nanoparticles.
6. An electro-optic device according to claim 5 , wherein said plurality of nanoparticles are substantially optically transparent nanoparticles, and
wherein said network of nanowires and said plurality of nanoparticles form at least a portion of an optically transparent electrode of said electro-optic device.
7. An electro-optic device according to claim 5 , wherein at least some of said plurality of nanoparticles fuse junctions of overlapping nanowires together to reduce electrical sheet resistance of said network of nanowires.
8. An electro-optic device according to claim 6 , wherein said buffer layer comprises electrically conducting and optically transparent nanoparticles.
9. An electro-optic device according to claim 5 , further comprising a polymer layer at least one of encapsulating said layer of nanowires and said plurality of nanoparticles or being intermixed with at least one of said layer of nanowires and said plurality of nanoparticles to form a composite polymer-nanowire-nanoparticle layer.
10. An electro-optic device according to claim 5 , wherein said plurality of nanoparticles comprise at least one of a metal oxide, a conducting polymer, graphene, or fluorine-doped tin oxide.
11. An electro-optic device according to claim 10 , wherein said plurality of nanoparticles comprise at least one metal oxide selected from the group of metal oxides consisting of indium tin oxide, tin oxide, zinc oxide, aluminum zinc oxide, indium zinc oxide, vanadium oxide, and cerium oxide.
12. An electro-optic device according to claim 1 , wherein said plurality of nanowires comprise at least one of carbon nanotubes or metal nanowires.
13. An electro-optic device according to claim 12 , wherein said metal nanowires comprise at least one of silver, gold, copper, or aluminum.
14. An electro-optic device according to claim 1 , wherein said second electrode comprises a plurality of nanowires interconnected into a network of nanowires.
15. An electro-optic device according to claim 1 , wherein said second electrode is an optically transparent electrode.
16. An electro-optic device according to claim 1 , wherein said active layer is a bulk heterojunction organic semiconductor.
17. An electro-optic device according to claim 16 , wherein said electro-optic device is a photovoltaic device that has an average transparency of at least 10% across the visible range of wavelengths 400 nm to 650 nm.
18. An electro-optic device according to claim 16 , wherein said electro-optic device is a photovoltaic device that has an average transparency of at least 30% across the visible range of wavelengths 400 nm to 650 nm.
19. An electro-optic device according to claim 16 , wherein said electro-optic device is a photovoltaic device that has an average transparency of at least 50% across the visible range of wavelengths 400 nm to 650 nm.
20. An electro-optic device according to claim 16 , wherein said electro-optic device is a photovoltaic device that has an average transparency of at least 70% across the visible range of wavelengths 400 nm to 650 nm.
21. An electro-optic device according to claim 16 , wherein said bulk heterojunction organic semiconductor comprises a polymer comprising a repeated unit having the structure of formula (I)
wherein R 1 , R 2 and R 3 are independently selected from alkyl groups with up to 18 C atoms, aryls and substituted aryls;
X is selected from Oxygen, Sulfur, Selenium and Nitrogen atoms; and
Ar 1 and Ar 2 are each, independently, one to five monocyclic arylene, bicyclic arylene, and polycyclic arylene, monocyclic heteroarylene, bicyclic heteroarylene and polycyclic heteroarylene groups, either fused or linked.
22. An electro-optic device according to claim 21 , wherein Ar 1 and Ar 2 are independently selected from the group consisting of
where, in the above structures, R is a proton, fluorine atom, CF 3 , CN, NO 2 , or alkyl group with carbon atom number of 1-18.
23. An electro-optic device according to claim 21 , wherein the repeated unit has the structure of formula (II)
where R 1 and R 3 are independently selected from alkyl groups with up to 18 C atoms, aryls and substituted aryls.
24. An electro-optic device according to claim 23 , wherein the R 1 and R 3 are independently selected from alkyl groups with 4 to 12 C atoms.
25. An electro-optic device according to claim 24 , wherein R 1 is a 2-ethylhexyl group and R 3 is a 2-butyloctyl group.
26. An electro-optic device according to claim 1 , wherein said buffer layer is a p-type semiconductor and said electro-optic device is a photovoltaic device with an inverted device structure.
27. An electro-optic device according to claim 1 , wherein said buffer layer is an n-type semiconductor and said electro-optic device is a photovoltaic device with a regular device structure.
28. An electro-optic device according to claim 1 , further comprising:
a second active layer electrically connected with the first-mentioned active layer along a first side; and
a third electrode electrically connected to said second active layer along a second side of said second active layer such that said electro-optic device is a tandem electro-optic device.