IP Library › Granted Patent US 8,900,892
Granted Patent B2
US 8,900,892 · App. 13/842,127 · Granted Dec 2, 2014

Printing phosphor on LED wafer using dry film lithography

Inventors: Zequn Mei (Fremont, CA); Xianto Yan (Palo Alto, CA)
Assignee: LedEngin, Inc.
H01L33/50H01L33/508H01L2933/0041H01L33/505
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Quick Facts
Patent No.
US 8,900,892
App. No.
13/842,127
Granted
Dec 2, 2014
Kind
B2
Abstract

A method for depositing a layer of phosphor-containing material on a plurality of LED (light-emitting diode) dies on a wafer includes disposing a layer of dry photoresist film over a plurality of LED dies on a wafer, disposing a mask layer over the dry photoresist film, and patterning the dry photoresist film to form a plurality of openings in the dry photoresist film to expose a top surface of each of the LED dies. The method also includes depositing a phosphor-containing material on the exposed top surface of each the LED dies using a screen printing process, and removing the patterned dry photoresist film.

Claims (36)

1. A method for depositing a layer of phosphor-containing material on a plurality of LED (light-emitting diode) dies on a wafer, the method comprising:

disposing a layer of dry photoresist film over a plurality of LED dies on a wafer, a bottom surface of the dry photoresist film being substantially aligned to top surfaces of the LED dies;

disposing a mask layer over the dry photoresist film; and

patterning the dry photoresist film to form a plurality of openings in the dry photoresist film to expose a top surface of each of the LED dies, the patterned dry photoresist film being substantially above the plurality of LED dies;

depositing a phosphor-containing material only on the exposed top surface of each the LED dies; and

removing the patterned dry photoresist film.

2. The method of claim 1 , wherein the patterned dry photoresist film is configured to cover bond pad areas on the LED dies.

3. The method of claim 1 , wherein a thickness of the photoresist layer is equal to a desired thickness of the phosphor-containing material.

4. The method of claim 1 , wherein depositing the phosphor-containing material in each of the openings in the patterned dry resist film comprises:

depositing the phosphor-containing material on the patterned photoresist layer and the LED dies; and

removing the phosphor-containing material from the top surface of the photoresist layer and on the top surface of the LED dies that protrudes above the top surface of the stencil.

5. The method of claim 1 , wherein depositing the phosphor-containing material in each of the openings in the photoresist layer comprises using a screen printing method.

6. The method of claim 1 , wherein the plurality of LEDs is formed on a semiconductor substrate.

7. The method of claim 1 , wherein the plurality of LEDs is formed on a silicon wafer.

8. The method of claim 1 , wherein the plurality of LEDs is formed on a silicon carbide (SiC) substrate.

9. The method of claim 1 , wherein the plurality of LEDs is formed on a Sapphire (Al 2 O 3 ) substrate.

10. A method for depositing a layer of phosphor-containing material on a plurality of LED (light-emitting diode) dies on a substrate, the method comprising:

forming a patterned photoresist layer over a plurality of LED dies on a substrate, the patterned photoresist layer having a plurality of openings configured to expose a top surface of each of the LED dies, the patterned photoresist layer being substantially above the plurality of LED dies;

depositing a phosphor-containing material only on the exposed top surface of each the LED dies; and

removing the photoresist layer.

11. The method of claim 10 , wherein forming the photoresist layer comprising:

disposing a layer of dry photoresist film over the template;

disposing a mask layer over the dry photoresist film; and

forming a plurality of openings in the dry photoresist film.

12. The method of claim 10 , wherein depositing the phosphor-containing material in each of the openings in the photoresist layer comprises using a screen printing method.

13. The method of claim 10 , wherein the plurality of LEDs is formed on a semiconductor substrate.

14. The method of claim 10 , wherein the plurality of LEDs is formed on a silicon wafer.

15. A method for depositing a layer of phosphor-containing material on a plurality of LED (light-emitting diode) dies on a substrate, the method comprising:

forming a template over a plurality of LED dies on a substrate, the template having a plurality of openings configured to expose a top surface of each of the LED dies, a bottom surface of the template being substantially aligned to top surfaces of the LED dies;

depositing a phosphor-containing material only on the exposed top surface of each the LED dies; and

removing the template.

16. The method of claim 15 , wherein the template is made of a material that can be selectively etched from the phosphor-containing material.

17. The method of claim 15 , wherein the template has a non-sticky surface such that the template can be removed from the deposited phosphor-containing material.

18. The method of claim 15 , wherein the template is a patterned dry photoresist film.

19. The method of claim 15 , wherein the plurality of LEDs is formed on a semiconductor substrate.

20. The method of claim 15 , wherein the plurality of LEDs is formed on a silicon wafer.

Assignments (2)
MERGER Recorded Jul 28, 2026
From: LEDENGIN INC.
To: OSRAM SYLVANIA INC.
Reel/Frame 076077/0285 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2013
From: MEI, ZEQUN; YAN, XIANTAO
To: LEDENGIN, INC.
Reel/Frame 030045/0090 →
Continuity (2)
Continuation In Part 13338936 · Dec 28, 2011
Related Publication 20130210179A1 · Aug 15, 2013