IP Library › Granted Patent US 9,231,558
Granted Patent B2
US 9,231,558 · App. 13/845,736 · Granted Jan 5, 2016

High frequency power amplifier

Inventor: Tomoyuki Asada (Tokyo, JP)
Assignee: MITSUBISHI ELECTRIC CORPORATION
H03H11/02H03F3/189H03H7/46
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Quick Facts
Patent No.
US 9,231,558
App. No.
13/845,736
Granted
Jan 5, 2016
Kind
B2
Abstract

A high frequency power amplifier includes an amplification element amplifying a high frequency signal; a duplexer to which an output signal of the amplification element is inputted, the duplexer allowing a signal of a certain frequency band to pass and attenuating signals of other frequency bands; a matching circuit connected between the amplification element and the duplexer; an external terminal connected to the matching circuit; and a passive element connected between the external terminal and a grounding point. The amplification element, the matching circuit, and the duplexer are integrally mounted on a single substrate. The passive element is located outside the substrate.

Claims (12)

1. A high frequency power amplifier comprising:

an amplification element amplifying a high frequency signal;

a duplexer to which an output signal of the amplification element is input, wherein the duplexer passes a signal of a certain frequency band and attenuates signals of other frequency bands;

first and second matching circuits connected in series, wherein an input of the first matching circuit is connected at a first junction point to an output of the amplification element, the first and second matching circuits are connected to each other at a second junction point, and an output of the second matching circuit is connected at a third junction point to an input of the duplexer;

a first external terminal connected to the second junction point, between the first and second matching circuits; and

a first passive element connected between the first external terminal and a grounding point, wherein

the amplification element, the first and second matching circuits, and the duplexer are integrally mounted on a single substrate, and

the first passive element is located outside the substrate.

2. The high frequency power amplifier according to claim 1 , including second and third external terminals respectively connected to the first and third junction points, and

second and third passive elements respectively connected between the second and third external terminals and the grounding point.

3. The high frequency power amplifier according to claim 1 , including a plurality of signal paths on the substrate, wherein each signal path respectively includes an amplification element, first and second matching circuits, a first external terminal, and a duplexer, arranged according to claim 1 .

4. The high frequency power amplifier according to claim 2 , including a plurality of signal paths on the substrate, wherein each signal path respectively includes an amplification element, first and second matching circuits, first, second, and third external terminals, and a duplexer, arranged according to claim 2 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2017
From: MITSUBISHI ELECTRIC CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 040839/0688 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2013
From: ASADA, TOMOYUKI
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 030463/0443 →
Priority Claims (1)
JP 2012-174988 · Aug 7, 2012 · national
Continuity (1)
Related Publication 20140043111A1 · Feb 13, 2014