Infrared absorbing glass wafer and method for producing same
A glass wafer is provided that is made of a copper ions containing phosphate or fluorophosphate glass. The glass wafer has a diameter greater than 15 centimeters and a thickness of less than 0.4 millimeters. The glass wafer has two plane-parallel surfaces at least one of which is polished.
1. A glass wafer comprising:
a copper ions containing phosphate or fluorophosphate glass;
a diameter greater than 15 centimeters and a thickness of less than 0.4 millimeters; and
two plane-parallel surfaces, at least one of the two plane-parallel surfaces being polished, wherein the two plane-parallel surfaces have height modulations in form of waves with a height of less than 200 nanometers based on a length of not more than 1 millimeter.
2. The glass wafer as claimed in claim 1 , wherein the height is less than 130 nanometers.
3. The glass wafer as claimed in claim 1 , wherein the thickness varies by less than ±50 μm based on a surface area of 25 mm 2 .
4. The glass wafer as claimed in claim 3 , wherein the thickness ranges between 0.18 millimeters and 0.32 millimeters.
5. The glass wafer as claimed in claim 1 , further comprising bubbles and inclusions that are no larger than 200 nm.
6. The glass wafer as claimed in claim 1 , wherein the bubbles and inclusions that are no larger than 100 nm.
7. The glass wafer as claimed in claim 1 , comprising a composition, in weight percent, based on oxide of:
P 2 O 5 : 25-80;
Al 2 O 3 : 1-13;
B 2 O 3 : 0-3;
Li 2 O: 0-13;
Na 2 O: 0-10;
K 2 O: 0-11;
MgO: 1-10;
CaO: 0-16;
BaO: 0-26;
SrO: 0-16;
ZnO: 0-10; and
CuO: 1-7.
8. The glass wafer as claimed in claim 1 , comprising a composition, in weight percent, based on oxide of:
P 2 O 5 : 25-60;
Al 2 O 3 : 1-13;
Li 2 O: 0-13;
Na 2 O: 0-10;
K 2 O: 0-11;
MgO: 1-10;
CaO: 1-16;
BaO: 1-26;
SrO: 0-16;
ZnO: 0-10;
CuO: 1-7;
ΣRO (R=Mg, Ca, Sr, Ba) 15-40; and
ΣR 2 O (R=Li, Na, K) 3-18;
wherein starting from the composition, 1 to 39 mol % of the oxide ions (O 2− ) in the glass are replaced by fluoride ions (F).
9. An assembly comprising:
a glass wafer of a copper ions containing phosphate or fluorophosphate glass, the glass wafer having a diameter greater than 15 centimeters and a thickness of less than 0.4 millimeters, the glass wafer having two plane-parallel surfaces at least one of which is polished, the two plane-parallel surfaces having height modulations in form of waves with a height of less than 200 nanometers based on a length of not more than 1 millimeter; and
a semiconductor wafer with a plurality of optoelectronic array sensors for manufacturing camera modules, the glass wafer being bound to the semiconductor wafer.