Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and supplying an amine-based gas to the substrate in the process container; and (b) modifying byproducts adhered to an inside of the process container by supplying a nitriding gas into the process container after forming the thin film.
1. A method of manufacturing a semiconductor device, comprising:
(a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
(a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and
(a-2) supplying an amine-based gas to the substrate in the process container; and
(b) modifying byproducts adhered to an inside of the process container by supplying a nitriding gas into the process container after forming the thin film.
2. The method of claim 1 , wherein the cycle further comprises supplying an oxidizing gas to the substrate in the process container, and the thin film contains the predetermined element, oxygen, carbon and nitrogen or the predetermined element, oxygen and carbon.
3. The method of claim 1 , wherein the step (b) is performed while the substrate with the thin film formed thereon is accommodated in the process container.
4. The method of claim 1 , further comprising unloading the substrate with the thin film formed thereon from the inside of the process container after the step (b).
5. The method of claim 1 , further comprising unloading the substrate with the thin film formed thereon from the inside of the process container before the step (b).
6. The method of claim 1 , wherein the byproducts comprises an alkyl group.
7. The method of claim 1 , wherein the byproducts comprises an alkylamine salt.
8. The method of claim 1 , wherein the amine-based gas comprises amine.
9. The method of claim 1 , wherein the amine-based gas comprises at least one amine selected from a group consisting of ethylamine, methylamine, propylamine, isopropylamine, butylamine and isobutylamine.
10. The method of claim 1 , wherein the amine-based gas comprises at least one amine selected from a group consisting of triethylamine, diethylamine, monoethylamine, trimethylamine, dimethylamine, monomethylamine, tripropylamine, dipropylamine, monopropylamine, triisopropylamine, diisopropylamine, monoisopropylamine, tributylamine, dibutylamine, monobutylamine, triisobutylamine, diisobutylamine and monoisobutylamine.
11. The method of claim 1 , wherein the thin film contains the predetermined element, carbon and nitrogen.
12. A method of processing a substrate, comprising: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
(a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and
(a-2) supplying an amine-based gas to the substrate in the process container; and
(b) modifying byproducts adhered to an inside of the process container by supplying a nitriding gas into the process container after forming the thin film.
13. A method of manufacturing a semiconductor device, comprising:
(a) forming a thin film containing at least a predetermined element, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
(a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container;
(a-2) supplying an amine-based gas to the substrate in the process container; and
(a-3) supplying an oxidizing gas to the substrate in the process container; and
(b) modifying byproducts adhered to an inside of the process container by supplying a nitriding gas into the process container after forming the thin film.
14. The method of claim 13 , wherein the thin film contains the predetermined element, oxygen, carbon and nitrogen or the predetermined element, oxygen and carbon.