Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern

1. A composition for forming an upper layer film in liquid immersion lithography, comprising:

a solvent; and

a resin component comprising;

a first resin having a first repeating unit and a second repeating unit, the first repeating unit being a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof, the second repeating unit being a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof; and

a second resin having a third repeating unit and a fourth repeating unit, the third repeating unit being a repeating unit represented by a formula (3-1), a repeating unit represented by a formula (3-2), a repeating unit represented by a formula (3-3), or a combination thereof, the fourth repeating unit being a repeating unit represented by a formula (4), a film formed by the second resin having a receding contact angle with water of 65° or more,

wherein, in the formulae (1-1) to (1-3), each R 1 individually is a hydrogen atom or a methyl group, each of R 2 and R 3 individually is a methylene group, a linear or branched alkylene group having 2 to 6 carbon atoms, or an alicyclic alkylene group having 4 to 12 carbon atoms,

wherein, in the formulae (2-1) and (2-2), each R 4 individually is a hydrogen atom or a methyl group, and each R 5 individually is a single bond, a methylene group, or a linear or branched alkylene group having 2 to 6 carbon atoms,

wherein, in the formulae (3-1) to (3-3), each R 6 individually is a hydrogen atom, a methyl group, or a trifluoromethyl group, R 6 ′ is a linear or branched alkyl group having 1 to 3 carbon atoms with at least one hydrogen atom being substituted by a fluorine atom, each R 7 individually is a single bond, a methylene group, a linear or branched alkylene group having 2 to 6 carbon atoms, or an alicyclic alkylene group having 4 to 12 carbon atoms, R 8 is a linear or branched alkyl group having 1 to 10 carbon atoms with at least one hydrogen atom being substituted by a fluorine atom or an alicyclic alkyl group having 3 to 10 carbon atoms with at least one hydrogen atom being substituted by a fluorine atom, and A represents a single bond, a carbonyl group, a carbonyloxy group, or an oxycarbonyl group,

wherein, in the formula (4), R 9 is a hydrogen atom, a methyl group, or a trifluoromethyl group, and R 10 is a single bond, a methylene group, or a linear or branched alkylene group having 2 to 6 carbon atoms.

2. The composition according to claim 1 , wherein a film formed by the first resin has a receding contact angle with water of less than 60°.

3. The composition according to claim 1 , wherein a content of the first resin is in a range from 5% to 70% by weight based on 100% by weight of a total of the resin component.

4. An upper layer film in liquid immersion lithography, the upper layer film being formed using the composition according to claim 1 .

5. A method for forming a photoresist pattern, comprising:

applying a photoresist composition to a substrate to form a photoresist film;

applying the composition according to claim 1 to the photoresist film to form an upper layer film;

disposing a liquid immersion medium between the upper layer film and a lens;

irradiating the photoresist film and the upper layer film with exposure light through the liquid immersion medium and a mask having a specific pattern; and

developing the photoresist film to obtain a photoresist pattern.

6. The composition according to claim 1 , wherein the second repeating unit is a repeating unit represented by a formula (2-2).