IP Library › Granted Patent US 8,835,920
Granted Patent B2
US 8,835,920 · App. 13/856,590 · Granted Sep 16, 2014

Semiconductor device and method for manufacturing the same

Inventors: Shunpei Yamazaki (Setagaya, JP); Masayuki Sakakura (Tochigi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,835,920
App. No.
13/856,590
Granted
Sep 16, 2014
Kind
B2
Abstract

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

Claims (154)

1. A semiconductor device comprising:

a substrate;

a terminal portion comprising:

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a third conductive layer over and in contact with the second conductive layer; and

an FPC overlapping the third conductive layer and connected to the third conductive layer,

wherein the second conductive layer and the third conductive layer each have a light transmitting property, and

wherein the first conductive layer is in electrical contact with the second conductive layer and the third conductive layer.

2. A display panel comprising:

a substrate;

a display portion over the substrate, the display portion comprising:

a capacitor comprising a first electrode layer and a second electrode layer;

a pixel, the pixel comprising:

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor; and

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a terminal portion comprising:

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a third conductive layer over and in contact with the second conductive layer; and

an FPC overlapping the third conductive layer and connected to the third conductive layer,

wherein the second conductive layer and the third conductive layer each have a light transmitting property, and

wherein each of the pixel electrode layer, the first electrode layer and the second electrode layer have a light transmitting property, and

wherein the first conductive layer is in electrical contact with the second conductive layer and the third conductive layer.

3. A display panel comprising:

a substrate;

a display portion over the substrate, the display portion comprising a pixel, the pixel comprising:

a capacitor comprising a first electrode layer and a second electrode layer;

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor;

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a driver portion over the substrate, the driver portion being configured to control the display portion;

a terminal portion comprising:

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a third conductive layer over and in contact with the second conductive layer; and

an FPC overlapping the third conductive layer and connected to the third conductive layer,

wherein the second conductive layer and the third conductive layer each have a light transmitting property,

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film,

wherein the third conductive layer and the pixel electrode layer are formed from a same second conductive film,

wherein the insulating layer and the gate insulating layer are formed from a same insulating film,

wherein each of the pixel electrode layer, the first electrode layer and the second electrode layer have a light transmitting property, and

wherein the first conductive layer is in electrical contact with the second conductive layer and the third conductive layer.

4. The semiconductor device according to claim 1 , further comprising:

a transistor over the substrate, the transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer,

wherein the insulating layer and the gate insulating layer are formed from a same insulating film.

5. The semiconductor device according to claim 1 , further comprising:

a capacitor comprising a first electrode layer and a second electrode layer,

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film.

6. The semiconductor device according to claim 1 , further comprising:

a transistor over the substrate, the transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer; and

a capacitor comprising a first electrode layer and a second electrode layer,

wherein the insulating layer and the gate insulating layer are formed from a same insulating film, and

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film.

7. The semiconductor device according to claim 1 , further comprising:

a display portion;

a capacitor in the display portion, the capacitor comprising a first electrode layer and a second electrode layer;

a pixel electrode layer,

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film, and

wherein the third conductive layer and the pixel electrode layer are formed from a same second conductive film.

8. The semiconductor device according to claim 1 ,

wherein the first conductive layer has a light transmitting property.

9. The display panel according to claim 2 ,

wherein the first conductive layer has a light transmitting property.

10. The display panel according to claim 3 ,

wherein the first conductive layer has a light transmitting property.

11. The semiconductor device according to claim 1 ,

wherein the first conductive layer is in electrical contact with the second conductive layer via the third conductive layer.

12. The display panel according to claim 2 ,

wherein the first conductive layer is in electrical contact with the second conductive layer via the third conductive layer.

13. The display panel according to claim 3 ,

wherein the first conductive layer is in electrical contact with the second conductive layer via the third conductive layer.

14. The semiconductor device according to claim 6 ,

wherein the first electrode layer and the source electrode layer are formed from a same conductive film.

15. The display panel according to claim 2 ,

wherein the first electrode layer and the source electrode layer are formed from a same conductive film.

16. The display panel according to claim 3 ,

wherein the first electrode layer and the source electrode layer are formed from a same conductive film.

17. The semiconductor device according to claim 6 ,

wherein the second electrode layer and the gate electrode layer are formed from a same conductive film.

18. The display panel according to claim 2 ,

wherein the second electrode layer and the gate electrode layer are formed from a same conductive film.

19. The display panel according to claim 3 ,

wherein the second electrode layer and the gate electrode layer are formed from a same conductive film.

20. The semiconductor device according to claim 7 ,

wherein the second electrode layer and the pixel electrode layer are formed from the same second conductive film.

21. The display panel according to claim 2 ,

wherein the second electrode layer and the pixel electrode layer are formed from a same conductive film.

22. The display panel according to claim 3 ,

wherein the second electrode layer and the pixel electrode layer are formed from the same second conductive film.

23. The semiconductor device according to claim 6 ,

wherein the semiconductor layer comprises an oxide semiconductor layer.

24. The display panel according to claim 2 ,

wherein the semiconductor layer comprises an oxide semiconductor layer.

25. The display panel according to claim 3 ,

wherein the semiconductor layer comprises an oxide semiconductor layer.

26. The semiconductor device according to claim 1 ,

wherein the second conductive layer and the third conductive layer each comprise indium, zinc and oxygen.

27. The display panel according to claim 2 ,

wherein the second conductive layer and the third conductive layer each comprise indium, zinc and oxygen.

28. The display panel according to claim 3 ,

wherein the second conductive layer and the third conductive layer each comprise indium, zinc and oxygen.

29. A display panel according to claim 7 ,

wherein the capacitor is a storage capacitor included in a pixel.

30. A display panel according to claim 2 ,

wherein the capacitor is a storage capacitor included in the pixel.

31. A display panel according to claim 3 ,

wherein the capacitor is a storage capacitor included in the pixel.

32. An electronic appliance comprising the semiconductor device according to claim 1 .

33. An electronic appliance comprising the display panel according to claim 2 .

34. An electronic appliance comprising the display panel according to claim 3 .

35. A display panel comprising:

a substrate;

a pixel over the substrate, the pixel comprising:

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor; and

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a terminal portion configured to be connected with an FPC, the terminal portion comprising:

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a first transparent conductive layer over the insulating layer; and

a second transparent conductive layer over and in contact with the first transparent conductive layer,

wherein the first conductive layer is in electrical contact with the first transparent conductive layer and the second transparent conductive layer, and

wherein the second transparent conductive layer and the pixel electrode layer are formed from a same conductive layer.

36. The display panel according to claim 35 , wherein the source electrode layer and the drain electrode layer have a light transmitting property.

37. The display panel according to claim 35 , wherein the first transparent conductive layer, the source electrode layer and the drain electrode layer are formed from a same conductive layer.

38. The display panel according to claim 35 , wherein the semiconductor layer comprises an oxide semiconductor layer.

39. The display panel according to claim 35 , wherein the gate electrode layer has a light transmitting property.

40. The display panel according to claim 35 , wherein the display panel is a liquid crystal device.

41. The display panel according to claim 35 , further comprising a light emitting layer over the pixel electrode layer.

42. A display panel comprising:

a substrate;

a pixel over the substrate, the pixel comprising:

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor; and

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a terminal portion configured to be connected with an FPC, the terminal portion comprising:

a first conductive layer over the substrate;

a first insulating layer over the first conductive layer;

a first transparent conductive layer over the first insulating layer;

a second insulating layer over the first transparent conductive layer; and

a second transparent conductive layer over the second insulating layer, wherein the second transparent conductive layer is in contact with the first transparent conductive layer,

wherein the first conductive layer is in electrical contact with the first transparent conductive layer and the second transparent conductive layer, and

wherein the second transparent conductive layer and the pixel electrode layer are formed from a same conductive layer.

43. The display panel according to claim 42 , wherein the source electrode layer and the drain electrode layer have a light transmitting property.

44. The display panel according to claim 42 , wherein the first transparent conductive layer, the source electrode layer and the drain electrode layer are formed from a same conductive layer.

45. The display panel according to claim 42 , wherein the semiconductor layer comprises an oxide semiconductor layer.

46. The display panel according to claim 42 , wherein the gate electrode layer has a light transmitting property.

47. The display panel according to claim 42 , wherein the display panel is a liquid crystal device.

48. The display panel according to claim 42 , further comprising a light emitting layer over the pixel electrode layer.

Priority Claims (1)
JP 2009-164265 · Jul 10, 2009 · national
Continuity (3)
Continuation 13658201 · Oct 23, 2012
Continuation 12832334 · Jul 8, 2010
Related Publication 20130221350A1 · Aug 29, 2013