Power transistor drive circuit
Aspects of the invention include a constant current source that generates a constant current, apart from a constant current circuit, and a temperature detection zener diode (a temperature detection element). The input side of the constant current source can be connected to a power source. The output side of the constant current source can be connected to the anode of the temperature detection diode. The anode of the temperature detection zener diode can also be connected to one end of a resistor provided in the constant current circuit. Further, the cathode of the temperature detection zener diode can be connected to a GND. Further, the temperature detection zener diode can be incorporated in the same semiconductor substrate as a semiconductor substrate into which an IGBT is built.
1. A power transistor drive circuit, comprising:
a constant current generation unit, having a first transistor, a second transistor, a third transistor, and a constant current resistor, that supplies a current to a power transistor;
a constant current source that generates a constant current, apart from the constant current generation unit; and
a temperature detection element, provided integrally in a semiconductor substrate in which is provided the power transistor, that generates a voltage in accordance with temperature, based on the constant current output from the constant current source, wherein
one end of the constant current resistor is connected to a first reference potential, while the other end is connected to the source of the first transistor,
the drain of the first transistor is connected to the drain of the second transistor,
the source of the second transistor is connected to a second reference potential, and
the third transistor, of which the drain is connected to the gate, configures a current mirror with the first transistor, while the source of the third transistor is connected to the second reference potential, and the drive circuit further comprising:
a control circuit that, based on the voltage in accordance with temperature generated by the temperature detection element, controls a current flowing through the first transistor and constant current resistor,
wherein
the constant current resistor is configured including a first resistor, a second resistor, and a third resistor,
the voltage in accordance with temperature has negative temperature characteristics, and
when ranges of the voltage in accordance with temperature corresponding to a high temperature, a normal temperature, and a low temperature are taken to be a first voltage range, a second voltage range, and a third voltage range respectively, the control circuit is such that
when the voltage in accordance with temperature is in the first temperature range, one of the first to third resistors is connected in series between the first transistor and first reference potential,
when the voltage in accordance with temperature is in the second temperature range, two of the first to third resistors are connected in series between the first transistor and first reference potential, and
when the voltage in accordance with temperature is in the third temperature range, all of the first to third resistors are connected in series between the first transistor and first reference potential.
2. The power transistor drive circuit according to claim 1 , wherein the temperature detection element is a diode.
3. The power transistor drive circuit according to claim 1 , wherein
the lower the temperature of the power transistor, the further the control circuit reduces the value of current flowing through the constant current resistor of the constant current generation unit.
4. The power transistor drive circuit according to claim 1 , wherein
the control circuit controls the gate voltage of the first transistor based on the voltage in accordance with temperature generated by the temperature detection element and on a reference voltage.
5. The power transistor drive circuit according to claim 1 , wherein the power transistor is an IGBT.