Resist pattern-forming method, and radiation-sensitive resin composition

1. A resist pattern-forming method comprising:

coating a radiation-sensitive resin composition on a substrate to provide a resist film;

exposing the resist film; and

developing the exposed resist film using a developer solution comprising no less than 80% by mass of an organic solvent,

wherein, the radiation-sensitive resin composition comprises:

a polymer which has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and comprises a first structural unit that includes an acid-labile group, and less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group;

a radiation-sensitive acid generator; and

an acid diffusion controller which includes a compound having an amide group, a photodegradable base.

2. The resist pattern-forming method according to claim 1 , wherein the first structural unit includes a plurality of kinds of structural units, and at least one of the plurality of kinds of structural units is a third structural unit represented by a formula (1):

wherein, in the formula (1), R represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R p represents an acid-labile group represented by a formula (i):

wherein, in the formula (i), R p1 to R p3 each independently represent an alkyl group having 1 to 4 carbon atoms or an alicyclic hydrocarbon group having 4 to 9 carbon atoms; or two of R P1 to R P3 taken together represent a divalent alicyclic hydrocarbon group having 4 to 9 carbon atoms together with the carbon atom to which the two of R P1 to R P3 bond, and R P1 to R P3 other than the two of R P1 to R P3 represents an alkyl group having 1 to 4 carbon atoms or an alicyclic hydrocarbon group having 4 to 9 carbon atoms; or R P1 to R P3 taken together represent a divalent alicyclic hydrocarbon group having 4 to 9 carbon atoms together with the carbon atom to which R P1 to R P3 bond.

3. The resist pattern-forming method according to claim 2 , wherein R p1 , R p2 and R p3 in the formula (i) each independently represent an alkyl group having 1 to 4 carbon atoms; or R p1 represents an alkyl group having 1 to 4 carbon atoms, and R p2 and R p3 taken together represent a divalent alicyclic hydrocarbon group having 4 to 9 carbon atoms together with the carbon atom to which R p2 and R p3 bond.

4. The resist pattern-forming method according to claim 2 , wherein the first structural unit included in the polymer comprises no less than 60 mol % and no greater than 95 mol % of the third structural unit.

5. The resist pattern-forming method according to claim 1 , wherein the organic solvent is an alcohol solvent, an ether solvent, a ketone solvent, an amide solvent, an ester solvent, a hydrocarbon solvent or a combination thereof.

6. A radiation-sensitive resin composition comprising:

a polymer which has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and comprises a first structural unit that includes an acid-labile group, and less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group;

a radiation-sensitive acid generator; and

an acid diffusion controller which includes a compound having a photodegradable base,

the radiation-sensitive resin composition being for use in a resist pattern-forming method comprising:

using a developer solution comprising no less than 80% by mass of an organic solvent.