Granted Patent B2

US 9,476,862 · App. 13/861,962 · Granted Oct 25, 2016

Inventors: Abhishek Motayed (Rockville, MD); Geetha Aluri (Clifton Park, NY); Albert V. Davydov (North Potomac, MD); Mulpuri V. Rao (Fairfax Station, VA); Vladimir P. Oleshko (Gaithersburg, MD); Ritu Bajpai (Santa Clara, CA); Mona E. Zaghloul (Bethesda, MD)

Assignees: University of Maryland, College Park; The United States of America, as Represented by the Secretary of Commerce, National Institute of Standards and Technology; George Mason University; The George Washington University

G01N33/0031G01N27/3278G01N27/4146

Abstract

Claims (37)

1. A multi-analyte sensor, comprising:

a substrate having an upper surface;

a semiconductor nanostructure having an outer surface and disposed on said upper surface of said substrate;

first metal-oxide nanoparticles functionalizing said outer surface of said semiconductor nanostructure and enabling detection of a target analyte in the presence of light, said first metal-oxide nanoparticles having a first adsorption profile; and

second metal nanoparticles functionalizing said outer surface of said semiconductor structure, said second metal nanoparticles having a second adsorption profile,

wherein said target analyte preferentially adsorbs on said first metal-oxide nanoparticles, and an interfering analyte preferentially adsorbs on said second metal nanoparticles.

2. The sensor of claim 1 , wherein said sensor exhibits a change in output upon detection of said target analyte, said output selected from the group consisting of current, voltage and resistance.

3. The sensor of claim 1 , wherein said semiconductor nanostructure comprises a plurality of segments coupled in series to define a single current path.

4. The sensor of claim 1 , wherein said sensor enables detection of said target analyte within a carrier gas of air, nitrogen or argon.

5. The sensor of claim 1 , wherein said semiconductor nanostructure comprises a material selected from the group consisting of gallium nitride (GaN), indium nitride (InN), aluminum gallium nitride (ALGaN), zinc oxide (ZnO), and Indium arsenide (InAs).

6. The sensor of claim 1 , wherein said first metal-oxide nanoparticles comprise one or more nanoparticles selected from the group consisting of zinc oxide (ZnO) nanoparticles, titanium dioxide (TiO 2 ) nanoparticles, tin oxide nanoparticles, iron oxide nanoparticles, magnesium oxide nanoparticles, vanadium oxide nanoparticles, nickel oxide nanoparticles, zirconium oxide nanoparticles, aluminum oxide nanoparticles, copper oxide nanoparticles, and strontium oxide nanoparticles.

7. The sensor of claim 1 , wherein said second metal nanoparticles comprise one or more nanoparticles selected from the group consisting of titanium nanoparticles, nickel nanoparticles, chromium nanoparticles, cobalt nanoparticles, ruthenium nanoparticles, rhodium nanoparticles, gold nanoparticles, silver nanoparticles, platinum nanoparticles, palladium nanoparticles, and vanadium nanoparticles.

8. The sensor of claim 1 , wherein said sensor is capable of detecting said target analyte at a temperature of less than about 100° C.

9. The sensor of claim 1 , wherein said target analyte is an alcohol vapor.

10. The sensor of claim 9 , wherein said alcohol vapor is selected from the group consisting of methanol, ethanol, n-propanol, isopropanol, n-butanol, and isobutanol.

11. The sensor of claim 1 , wherein said sensor exhibits increased conductivity upon exposure to said target analyte in the presence of UV excitation.

12. The sensor of claim 1 , wherein said target analyte is an aromatic compound.

13. The sensor of claim 12 , wherein said aromatic compound is selected from the group consisting of benzene, toluene, ethylbenzene, xylene, and chlorobenzene.

14. The sensor of claim 12 , wherein said sensor detects said target analyte at a concentration of less than about 1%.

15. The sensor of claim 14 , wherein said concentration of said target analyte is between about 1 parts per million and about 50 parts per billion.

16. The sensor of claim 1 , wherein said sensor has a response and recovery time of less than about 180 seconds.

17. The sensor of claim 16 , wherein said response and recovery time is less than about 75 seconds.

18. A nanostructure sensing device, comprising:

a semiconductor nanostructure having an outer surface;

metal nanoparticle clusters functionalizing said outer surface of said nanostructure; and

metal-oxide nanoparticle clusters functionalizing said outer surface of said nanostructure;

wherein one of said metal or metal-oxide nanoparticle clusters functionalizing said outer surface of said nanostructure forms a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte, and an interfering analyte preferentially absorbs on the other of said metal or metal-oxide nanoparticle clusters functionalizing said outer surface of said nanostructure.

19. The device of claim 18 , wherein said device comprises multicomponent nanoparticle clusters comprising said metal and metal-oxide nanoparticle clusters.

20. The device of claim 18 , wherein said nanostructure has a first bandgap, and said nanoparticle clusters have a second bandgap equal to or less than said first bandgap.

21. The device of claim 18 , wherein said device enables detection of said target analyte within a carrier gas of air, nitrogen or argon.

22. The device of claim 18 , wherein said semiconductor nanostructure comprises a material selected from the group consisting of gallium nitride (GaN), indium nitride (InN), aluminum gallium nitride (ALGaN), zinc oxide (ZnO), and Indium arsenide (InAs).

23. The device of claim 18 , wherein said metal-oxide nanoparticle clusters comprise one or more nanoparticles selected from the group consisting of zinc oxide (ZnO) nanoparticles, titanium dioxide (TiO 2 ) nanoparticles, tin oxide nanoparticles, iron oxide nanoparticles, magnesium oxide nanoparticles, vanadium oxide nanoparticles, nickel oxide nanoparticles, zirconium oxide nanoparticles, aluminum oxide nanoparticles, copper oxide nanoparticles, and strontium oxide nanoparticles.

24. The device of claim 23 , wherein said metal nanoparticle clusters comprise one or more nanoparticles selected from the group consisting of titanium nanoparticles, nickel nanoparticles, chromium nanoparticles, cobalt nanoparticles, ruthenium nanoparticles, rhodium nanoparticles, gold nanoparticles, silver nanoparticles, platinum nanoparticles, palladium nanoparticles, and vanadium nanoparticles.

25. The device of claim 18 , wherein said device is capable of detecting said target analyte at a temperature of less than about 100° C.

26. The device of claim 18 , wherein said device exhibits increased conductivity upon exposure to said target analyte in the presence of UV excitation.

27. The device of claim 18 , wherein said device detects said target analyte at a concentration of between about 1 parts per million and about 50 parts per billion.

28. The device of claim 18 , wherein said device has a response and recovery time of less than about 180 seconds.

Assignments (8)

Continuity (5)