Chip interposer, semiconductor device, and method for manufacturing a semiconductor device

1. A chip interposer, comprising:

a first interconnect level comprising a first pad and comprising a plurality of first electrically conductive lines, the first pad coupled to one of the first electrically conductive lines; and

a second interconnect level comprising a second pad and comprising a plurality of second electrically conductive lines, the second pad coupled to one of the second electrically conductive lines not coupled to one of the first electrically conductive lines;

at least one via electrically coupling one of the first electrically conductive lines that is coupled to the first pad to one of the second electrically conductive lines that is not coupled to the second pad,

wherein the second pad faces in the same direction as the first pad, and

wherein the first interconnect level is disposed over the second interconnect level so that the first pad is higher than the second pad and the plurality of first electrically conductive lines are at a same height or higher than the second pad.

2. The chip interposer of claim 1 , wherein at least one of the first and second interconnect levels is disposed within a bulk of the chip interposer.

3. The chip interposer of claim 1 , wherein the first interconnect level is disposed at a first surface of the chip interposer and the second interconnect level is disposed within a bulk of the chip interposer.

4. The chip interposer of claim 3 , further comprising a third interconnect level disposed at a second surface of the chip interposer opposite the first surface of the chip interposer, the third interconnect level comprising a third pad.

5. The chip interposer of claim 4 , wherein the third pad faces a direction opposite to a direction to which the first pad and the second pad face.

6. The chip interposer of claim 4 , wherein at least one of the first and second pads is electrically coupled to the third pad.

7. The chip interposer of claim 1 , wherein the chip interposer comprises a laminate.

8. The chip interposer of claim 1 , wherein the chip interposer comprises a circuit board.

9. The chip interposer of claim 1 , wherein the chip interposer comprises an opening that exposes the second pad.

10. The chip interposer of claim 1 , wherein a lateral distance between the first pad and the second pad is less than or equal to about 100 μm.

11. The chip interposer of claim 1 , wherein at least a portion of a surface of the second pad is exposed.

12. The chip interposer of claim 1 , wherein a lateral distance between one or more of the first electrically conductive lines and at least one of the first and second pads is less than or equal to about 30 μm.

13. A semiconductor device, comprising:

a chip interposer, comprising:

a first interconnect level comprising a first pad and comprising a plurality of first electrically conductive lines, the first pad coupled to one of the first electrically conductive lines;

a second interconnect level comprising a second pad and comprising a plurality of second electrically conductive lines, the second pad coupled to one of the second electrically conductive lines not coupled to one of the first electrically conductive lines,

at least one via electrically coupling one of the first electrically conductive lines that is coupled to the first pad to one of the second electrically conductive lines that is not coupled to the second pad,

wherein the second pad of the second interconnect level faces in the same direction as the first pad of the first interconnect level and wherein the first interconnect level is disposed over the second interconnect level;

a chip disposed over the chip interposer, the chip comprising a first pad and a second pad, wherein the first pad of the chip is electrically coupled to the first pad of the first interconnect level of the chip interposer and wherein the second pad of the chip is electrically coupled to the second pad of the second interconnect level of the chip interposer.

14. The semiconductor device of claim 13 , wherein a lateral distance between the first pad and the second pad of the chip is less than or equal to about 100 μm.

15. The semiconductor device of claim 13 , further comprising:

first and second interconnects disposed between the chip interposer and the chip, wherein the first interconnect electrically couples the first pad of the chip to the first pad of the first interconnect level of the chip interposer, and wherein the second interconnect electrically couples the second pad of the chip to the second pad of the second interconnect level of the chip interposer.

16. The semiconductor device of claim 15 , wherein the first interconnect comprises a first pillar, and wherein the second interconnect comprises a second pillar.

17. The semiconductor device of claim 16 , wherein the first pillar comprises a first height and the second pillar comprises a second height, wherein the second height is greater than the first height.

18. The semiconductor device of claim 13 , wherein the chip interposer comprises a circuit board.

19. The semiconductor device of claim 13 , wherein the chip interposer comprises an opening adjoining the second pad of the second interconnect level.

20. The semiconductor device of claim 19 , further comprising an electrically conductive filling element disposed in the opening and at least partially filling the opening.

21. The semiconductor device of claim 20 , wherein the electrically conductive filling element comprises at least one of the following:

solder paste;

a solder ball;

a metal ball;

a solder ball having a metal core.

22. The semiconductor device of claim 20 , further comprising a first interconnect disposed between the first pad of the chip and the first pad of the first interconnect level of the chip interposer, and a second interconnect disposed between the second pad of the chip and the second pad of the second interconnect level of the chip interposer and in contact with the electrically conductive filling material.

23. The semiconductor device of claim 13 , configured as a flip chip package.

24. A method for manufacturing a semiconductor device, the method comprising:

providing a chip comprising at least a first pad and a second pad;

forming a first electrically conductive pillar over the first pad; and

forming a second electrically conductive pillar over the second pad,

wherein forming the first and second electrically conductive pillars comprises:

forming a first mask layer over the chip including the first and second pads;

patterning the first mask layer to form a first opening over the first pad and a second opening over the second pad;

at least partially filling the first and second openings with electrically conductive material;

forming a second mask layer over the patterned first mask layer and the first and second openings;

patterning the second mask layer to form a third opening exposing the second opening;

filling the second opening and at least partially filling the third opening with electrically conductive material; and

removing the first and second mask layers,

wherein the first electrically conductive pillar comprises a first height and the second electrically conductive pillar comprises a second height that is different from the first height.

25. The method of claim 24 , further comprising:

providing a chip interposer comprising a first interconnect level comprising a first pad, and a second interconnect level comprising a second pad, wherein the second pad faces in the same direction as the first pad; and

attaching the chip to the chip interposer, wherein the first pad of the chip interposer is attached to the first electrically conductive pillar and the second pad of the chip interposer is attached to the second electrically conductive pillar.