SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME, WIRING BOARD AND METHOD OF MANUFACTURING SAME, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE
Passivation films 3 a , 3 b are formed to cover both surfaces of semiconductor substrate 1 which comprises terminal pads 2 a , 2 b on both surfaces. Openings 3 c , 3 d are provided at positions on passivation films 3 a . 3 b which match with terminal pads 2 a , 2 b . Throughholes 9 are formed inside of openings 3 c , 3 d to extend through terminal pad 2 a , semiconductor substrate 1 , and terminal pad 2 b . Insulating layer 4 made of SiO 2 , SiN, SiO, or the like is formed on the inner surfaces of throughholes 9 . Buffer layer 5 made of a conductive adhesive is formed to cover insulating layer 4 and terminal pads 2 a , 2 b in openings 3 c , 3 d . Further, conductive layer 6 made of a metal film is formed on buffer layer 5 by electrolytic plating, non-electrolytic plating, or the like.
1 - 42 . (canceled)
43 . A semiconductor device comprising:
a semiconductor substrate;
a first terminal pad formed on a surface of said semiconductor substrate;
a throughhole extending through said first terminal pad and said semiconductor substrate in a thickness direction thereof;
a buffer layer made of a resin and formed to extend from an inner surface of said throughhole to the surface of said semiconductor substrate; said buffer layer having insulating properties, and
a conductive layer formed to cover said buffer layer, said conductive layer extending from above said buffer layer to said first terminal pad, and said conductive layer being directly in contact with said first terminal pad.
44 . The semiconductor device according to claim 43 , wherein said buffer layer has asperities which are formed on a surface closer to said conductive layer.
45 . The semiconductor device according to claim 43 , wherein:
a second terminal pad is formed at a position on the back surface of said semiconductor substrate, said position being in alignment to said first terminal pad,
said throughhole is formed to extend through said first terminal pad, said semiconductor substrate, and said second terminal pad, and
said buffer layer is formed to extend from the inner surface of said throughhole to both the front and back surfaces of said semiconductor substrate.
46 . The semiconductor device according to claim 45 , wherein said conductive layer extends from above said buffer layer to said second terminal pad, and said conductive layer is directly in contact with said second terminal pad.
47 . The semiconductor device according to claim 43 , wherein said buffer layer is formed of a resin whose elastic modulus is 1 Gpa or less.
48 . The semiconductor device according to claim 43 , wherein said conductive layer is formed in a tubular shape.
49 . A semiconductor package comprising a plurality of semiconductor devices according to claim 43 stacked therein.
50 . An electronic device comprising a semiconductor package according to claim 49 .
51 . The electronic device according to claim 50 , wherein said electronic device is a mobile telephone, a notebook type personal computer, a desktop type personal computer, a liquid crystal device, an interposer, or a module.