Amplifier using nonlinear drivers
A device includes a Doherty amplifier having a main path and a peaking path. The Doherty amplifier includes a main amplifier configured to amplify a signal received from the main path and a peaking amplifier configured to amplify a signal received from the peaking path when the signal received from the peaking path exceeds a predetermined threshold. The device includes a first driver amplifier connected to the main path of the Doherty amplifier. The first driver amplifier is configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the main amplifier. The device includes a second driver amplifier connected to the peaking path of the Doherty amplifier. The second driver amplifier is configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the peaking amplifier.
1. A device, comprising:
a Doherty amplifier having a main path and a peaking path, the Doherty amplifier including a main amplifier configured to amplify a signal received from the main path and a peaking amplifier configured to amplify a signal received from the peaking path when the signal received from the peaking path exceeds a predetermined threshold;
a first driver amplifier connected to the main path of the Doherty amplifier, the first driver amplifier configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the main amplifier; and
a second driver amplifier connected to the peaking path of the Doherty amplifier, the second driver amplifier configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the peaking amplifier.
2. The device of claim 1 , wherein the first driver amplifier and the second driver amplifier include Gallium Arsenide transistors.
3. The device of claim 2 , wherein the first driver amplifier and the second driver amplifier include Indium Gallium Phosphide (InGaP) based Heterojunction Bipolar transistors (HBT).
4. The device of claim 2 , wherein the main amplifier and the peaking amplifier include laterally diffused metal oxide semiconductor transistors.
5. The device of claim 1 , wherein the first driver amplifier or the second driver amplifier is a class AB amplifier.
6. The device of claim 1 , wherein the first driver amplifier or the second driver amplifier is configured to inhibit the transmission of second order harmonics and third-order harmonics.
7. The device of claim 1 , including a signal splitter configured to receive an input signal and output a first signal to the first driver amplifier and a second signal to the second driver amplifier.
8. The device of claim 1 , wherein at least one of the first driver amplifier and the second driver amplifier is configured to operate at from 3% to 10% of a maximum current drawn by the at least one of the first driver amplifier and the second driver when operating at saturation.
9. A device, comprising:
a first amplifier configured to amplify a signal received from a first path;
a second amplifier configured to amplify a signal received from a second path;
a first driver amplifier connected to the first path, the first driver amplifier configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the first amplifier; and
a second driver amplifier connected to the second path, the second driver amplifier configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the second amplifier.
10. The device of claim 9 , wherein the first driver amplifier and the second driver amplifier include Gallium Arsenide transistors.
11. The device of claim 10 , wherein the first driver amplifier and the second driver amplifier include Indium Gallium Phosphide (InGaP) based Heterojunction Bipolar transistors (HBT).
12. The device of claim 10 , wherein the first amplifier and the second amplifier include laterally diffused metal oxide semiconductor transistors.
13. The device of claim 9 , wherein the first driver amplifier or the second driver amplifier is a class AB amplifier.
14. The device of claim 9 , wherein the first driver amplifier or the second driver amplifier is configured to inhibit the transmission of second order harmonics and third-order harmonics.
15. The device of claim 9 , including a signal splitter configured to receive an input signal and output a first signal to the first path and a second signal to the second path.
16. The device of claim 9 , wherein at least one of the first driver amplifier and the second driver amplifier is configured to operate at from 3% to 10% of a maximum current drawn by the at least one of the first driver amplifier and the second driver at a saturation condition.
17. A method of operating an amplifier, the amplifier including a Doherty amplifier including a main amplifier configured to amplify a signal received from a main path and a peaking amplifier configured to amplify a signal received from a peaking path when the signal received from the peaking path exceeds a predetermined threshold, a first driver amplifier connected to the main path of the Doherty amplifier, and a second driver amplifier connected to the peaking path of the Doherty amplifier, the method comprising:
operating the first driver amplifier as a class AB or class B amplifier to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the main amplifier; and
operating the second driver amplifier as a class AB or class B amplifier to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the peaking amplifier.
18. The method of claim 17 , including applying digital predistortion to an input signal to the amplifier.
19. The method of claim 17 , wherein operating the first driver amplifier includes, when the main amplifier exhibits an amplitude or phase compression, operating the first driver amplifier to exhibit an amplitude or phase expansion configured to offset the amplitude or phase compression of the main amplifier.
20. The method of claim 17 , wherein operating the second driver amplifier includes, when the peaking amplifier exhibits amplitude or phase compression, operating the second driver amplifier to exhibit amplitude or phase expansion configured to offset the amplitude or phase compression of the peaking amplifier.