Extreme ultraviolet/soft X-ray laser nano-scale patterning using the demagnified talbot effect
An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.
1. Apparatus for producing nanometer-scale patterning on the surface of a sample, comprising:
a light source for generating a coherent light beam having a chosen wavelength
a focusing optic into which the light beam from said light source is directed, for causing the light beam emerging therefrom to converge; and
a Talbot mask having a periodic pattern of nanometer-scale unit cells formed thereon, said Talbot mask disposed in the converging light beam from said focusing optic at a first chosen distance from said focusing optic such that the converging light beam passes therethrough; the sample being disposed at a second chosen distance from said Talbot mask and having a photosensitive surface thereon responsive to the light beam passing through said Talbot mask, for generating a nanostructure having the pattern of unit cells of said Talbot mask on said sample.
2. The apparatus of claim 1 , wherein the second chosen distance is the distance of the first Talbot plane.
3. The apparatus of claim 2 , wherein the second chosen distance is one-fourth or three-fourths of the distance of the first Talbot plane.
4. The apparatus of claim 1 , wherein the first chosen distance is the distance at which a chosen demagnification of the pattern of arrays of unit cells occurs.
5. The apparatus of claim 1 , wherein said focusing optic comprises a mirror.
6. The apparatus of claim 1 , wherein said light source comprises an extreme ultraviolet laser.
7. The apparatus of claim 1 , wherein said photosensitive surface comprises a photoresist.