Anticipatory implant for TSV
View Patent ↗A method including introducing a dopant into a region of a substrate, etching a deep trench in the substrate through the region, gettering impurities introduced during etching of the deep trench using a pentavalent ion formed from a reaction between an element of the substrate and the dopant, wherein the charge of the pentavalent ion attracts the impurities, and filling the deep trench with a conductive material.
1. A method comprising:
introducing a dopant into a region of a substrate;
etching a deep trench in the substrate through the region;
gettering impurities introduced during etching of the deep trench using a pentavalent ion formed from a reaction between an element of the substrate and the dopant, wherein the charge of the pentavalent ion attracts the impurities; and
filling the deep trench with a conductive material.
2. The method of claim 1 , wherein the region is larger than a diameter of the deep trench.
3. The method of claim 1 , wherein the dopant comprises arsenic.
4. The method of claim 1 , further comprising:
implanting a source-drain region of an n-type device with the dopant.
5. The method of claim 1 , further comprising:
forming a barrier liner along a sidewall and a bottom of the deep trench, the barrier liner separates the substrate from the conductive material.
6. The method of claim 1 , wherein the deep trench is etched in close proximity to a p-type device.
7. The method of claim 1 , further comprising:
forming an interconnect level above the substrate.
8. The method of claim 1 , wherein the pentavalent ion is formed from a reaction between silicon or oxygen of the substrate and the dopant.
9. The method of claim 1 , wherein the impurities include potassium, sodium, or both.
10. A method comprising:
implanting, simultaneously, a region of a substrate and a source-drain region of an n-type device with a dopant, the region being adjacent to a p-type device;
etching a deep trench in the substrate through the region;
gettering impurities introduced during etching of the deep trench using a pentavalent ion formed from a reaction between an element of the substrate and the dopant, wherein the charge of the pentavalent ion attracts the impurities; and
filling the deep trench with a conductive material.
11. The method of claim 10 , wherein the region is larger than a diameter of the deep trench.
12. The method of claim 10 , wherein the dopant comprises arsenic.
13. The method of claim 10 , further comprising:
forming a barrier liner along a sidewall and a bottom of the deep trench, the barrier liner separates the substrate from the conductive material.
14. The method of claim 10 , further comprising:
forming an interconnect level above the substrate.
15. The method of claim 10 , wherein the pentavalent ion is formed from a reaction between silicon or oxygen of the substrate and the dopant.
16. The method of claim 10 , wherein the impurities include potassium, sodium, or both.
17. A method comprising:
introducing a dopant into a region of a substrate;
etching a deep trench in the substrate through the region; and
gettering impurities introduced during etching of the deep trench using a pentavalent ion formed from a reaction between an element of the substrate and the dopant.
18. The method of claim 17 , wherein the pentavalent ion is formed from a reaction between silicon or oxygen of the substrate and the dopant.
19. The method of claim 17 , wherein the impurities include potassium, sodium, or both.
20. The method of claim 17 , wherein the charge of the pentavalent ion attracts the impurities.