Semiconductor light emitting device with a light-reflecting face
The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.
1. A semiconductor light-emitting device, comprising:
a plurality of semiconductor layers composed of a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, for generating light via electron-hole recombination, wherein the plurality of semiconductor layers are grown sequentially using a growth substrate;
a first electrode for providing either electrons or holes to the first semiconductor layer and electrically connected with the first semiconductor layer;
a non-conductive reflective film formed over the second semiconductor layer to reflect light from the active layer towards the first semiconductor layer which is on the growth substrate side;
a second electrode for bonding, electrically connected with the second semiconductor layer and formed over and contacted with the non-conductive reflective film for providing remaining electrons or holes to the second semiconductor layer;
a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide the remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes and for connecting the finger electrode with second electrode; and
a light-transmitting conductive film formed between the non-conductive reflective film and the second semiconductor layer, for electrically communicating the finger electrode with the second semiconductor layer;
wherein the non-conductive reflective film comprises a distributed bragg reflector (DBR).
2. The semiconductor light emitting device as claimed in claim 1 , wherein the electrical connection is formed, passing through the non-conductive reflective film from the second electrode to the finger electrode.
3. The semiconductor light emitting device as claimed in claim 1 , wherein the non-conductive reflective film comprises a dielectric film underlying the DBR and having a refractive index lower than that of the second semiconductor layer.
4. The semiconductor light emitting device as claimed in claim 1 , further comprising:
a light-absorption preventing film formed below the finger electrode and between the plurality of semiconductor layers and the finger electrode, for preventing light generated from the active layer from being absorbed by the finger electrode.
5. The semiconductor light emitting device as claimed in claim 1 , wherein the first electrode comprises a finger electrode which extended from the first electrode along the first semiconductor layer.
6. The semiconductor light emitting device as claimed in claim 1 , further comprising:
a light-absorption preventing film formed below the finger electrode and between the plurality of semiconductor layers and the finger electrode, for preventing light generated from the active layer from being absorbed by the finger electrode.
7. The semiconductor light emitting device as claimed in claim 6 , wherein the light-absorption preventing film is composed of a light-transmitting material having a refractive index lower than that of the second semiconductor layer.
8. The semiconductor light emitting device as claimed in claim 6 , wherein the light-absorption preventing film is composed of a non-conductive material.
9. The semiconductor light emitting device as claimed in claim 6 , wherein the light-absorption preventing film is a light-transmitting dielectric film having a refractive index lower than that of the second semiconductor layer.
10. The semiconductor light emitting device as claimed in claim 6 , wherein the light-transmitting conductive film covers the light-absorption preventing film, and the finger electrode lies on the light-transmitting conductive film.
11. The semiconductor light emitting device as claimed in claim 6 , wherein the light-transmitting conductive film has openings to enable the non-conductive reflective film to come in contact with the plurality of semiconductor layers.
12. The semiconductor light emitting device as claimed in claim 6 , wherein the finger electrode comes in contact with the light-absorption preventing film.
13. The semiconductor light emitting device as claimed in claim 1 , wherein the second semiconductor layer is composed of a p-type group Ill nitride semiconductor.
14. The semiconductor light emitting device as claimed in claim 13 , wherein the electrical connection is formed, passing through the non-conductive reflective film from the second electrode to the finger electrode.
15. The semiconductor light emitting device as claimed in claim 14 , wherein the finger electrode lies on the light-transmitting conductive film.
16. The semiconductor light emitting device as claimed in claim 15 , wherein the first electrode comprises a finger electrode which extended from the first electrode along the first semiconductor layer.