Compound semiconductor devices and methods of fabricating the same
Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.
1. A compound semiconductor device, comprising:
a substrate;
a first graphene oxide layer on the substrate;
a first compound semiconductor layer on the first graphene oxide layer;
a second compound semiconductor layer between the substrate and the first graphene oxide layer; and
a second graphene oxide layer between the substrate and the second compound semiconductor layer, wherein the first graphene oxide layer includes a plurality of graphene sheets, wherein a portion of the second compound semiconductor layer is exposed between the plurality of graphene oxide sheets of the first graphene oxide layer, and wherein the second graphene oxide layer covers an entire surface of the substrate.
2. The compound semiconductor device of claim 1 , wherein the first compound semiconductor layer makes a contact with a surface of the portion of the second compound semiconductor layer exposed between the plurality of graphene oxide sheets of the first graphene oxide layer.
3. The compound semiconductor device of claim 1 , further comprising:
a buffer layer between the substrate and the first compound semiconductor layer, the buffer layer including at least one of AlN, AlGaN, GaN, InGaN, InN or AlGalnN.
4. The compound semiconductor device of claim 3 , wherein a thickness of the buffer layer is about 1 nm to about 200 nm.
5. The compound semiconductor device of claim 1 , wherein the first compound semiconductor layer is a nitride semiconductor layer including at least one of AlN, AlGaN, GaN, InGaN, InN or AlGalnN.
6. The compound semiconductor device of claim 1 , wherein the substrate includes at least one of sapphire, spinel, GaAs, InP, SiC or Si.
7. The compound semiconductor device of claim 1 , wherein a longitudinal length of the first graphene oxide sheet is about 50 nm to about 100 flm, and a thickness of the first graphene oxide sheet is about 0.3 nm to about 2 flm.
8. The compound semiconductor device of claim 1 , wherein the first graphene oxide layer includes a functionalized graphene sheet.
9. A light emitting device, comprising:
a substrate;
a first graphene oxide layer on the substrate;
a first n-type compound semiconductor layer on the first graphene oxide layer;
a second compound semiconductor layer between the substrate and the first graphene oxide layer;
a second graphene oxide layer between the substrate and the second compound semiconductor layer;
an active layer on then-type compound semiconductor layer;
a graphene oxide layer provided between the substrate and the active layer, the graphene oxide layer including a plurality of graphene oxide sheets; and
a p-type compound semiconductor layer on the active layer, wherein the first graphene oxide layer includes a plurality of graphene sheets, wherein a portion of the second compound semiconductor layer is exposed between the plurality of graphene oxide sheets of the first graphene oxide layer, and wherein the second graphene oxide layer covers an entire surface of the substrate.
10. The light emitting device of claim 9 , wherein then-type compound semiconductor layer includes a first semiconductor layer and a second semiconductor layer, and the first graphene oxide layer is provided between the first semiconductor layer and the second semiconductor layer.