Photodiode array
This photodiode array 10 includes quenching resistors 7 which are connected in series to respective avalanche photodiodes APDs, a peripheral wiring WL which surrounds a region in which the plurality of avalanche photodiodes APDs are formed, and a plurality of relay wirings 8 which are electrically connected to the peripheral wiring WL, so as to respectively connect at least two places of the peripheral wiring WL. One of an anode and a cathode of each avalanche photodiode APD is electrically connected to any one of the relay wirings 8 via the quenching resistor 7 , and the other of the anode and the cathode of each avalanche photodiode APD is electrically connected to another electrode 6 provided on a semiconductor substrate.
1. A photodiode array comprising:
a plurality of avalanche photodiodes formed within a semiconductor substrate;
quenching resistors which are connected in series to the respective avalanche photodiodes;
a peripheral wiring which surrounds a region in which the plurality of avalanche photodiodes are formed; and
a plurality of relay wirings which are electrically connected to the peripheral wiring, to respectively connect at least two places of the peripheral wiring, the photodiode array wherein
a resistance value per unit length of the peripheral wiring is smaller than a resistance value per unit length of the relay wiring,
one of an anode and a cathode of each of the avalanche photodiodes is electrically connected to any one of the relay wirings via the quenching resistor, and
the other of the anode and the cathode of each of the avalanche photodiodes is electrically connected to another electrode provided on the semiconductor substrate.
2. The photodiode array according to claim 1 , further comprising a transverse wiring which is electrically connected to the peripheral wiring, so as to connect at least two places of the peripheral wiring, and whose resistance value per unit length is smaller than a resistance value per unit length of the relay wiring, the photodiode array wherein
one ends of the respective relay wirings are electrically connected to the transverse wiring in place of the peripheral wiring.
3. The photodiode array according to claim 1 , further comprising capacitors which are respectively connected in parallel to the respective quenching resistors.
4. The photodiode array according to claim 3 , wherein
either anodes or cathodes of the respective avalanche photodiodes are electrically connected to ring-shaped electrodes,
the relay wirings include conductive peripheral regions which are spaced from the ring-shaped electrodes, and are extended so as to surround the ring-shaped electrodes, and
the capacitors have the peripheral regions extended from the relay wirings, and the ring-shaped electrodes.
5. The photodiode array according to claim 4 , further comprising intermediate wirings extended in parallel between the relay wirings, wherein
the intermediate wirings respectively connect at least two places of the peripheral wiring, and
the peripheral region continues into the intermediate wirings.
6. The photodiode array according to claim 4 , wherein
the peripheral regions are connected to both sides of the respective relay wirings, and
the peripheral regions adjacent to one another are spaced with respect to the relay wirings adjacent to one another.
7. The photodiode array according to claim 3 , wherein the respective relay wirings open at regions along center lines thereof.
8. The photodiode array according to claim 3 , wherein the capacitor has a covering wiring formed on the quenching resistor via an insulating layer, and one end of the covering wiring is electrically connected to one end of the quenching resistor.
9. The photodiode array according to claim 3 , wherein either anodes or cathodes of the respective avalanche photodiodes are electrically connected to ring-shaped electrodes, and
an aspect ratio of the ring-shaped electrode is 2 or higher.