Energy storage method and system using defect-engineered nanostructures

1. A method of fabricating an energy storage device, the method comprising:

producing a nanomaterial comprising nanostructures;

generating defects, using an electrophilic or nucleophilic additive, in the nanomaterial for increasing charge storage capability of the nanomaterial, further comprising:

depositing the nanomaterial on a first conductive surface of a first electrode;

depositing the nanomaterial on a second conductive surface of a second electrode;

providing a first spacer positioned in close proximity of the first electrode, the first spacer comprising an electron-insulating material;

providing a second spacer positioned in close proximity of the second electrode, the second spacer comprising the electron-insulating material; and

providing a separator positioned between the first spacer and the second spacer, the separator comprising a porous membrane.

2. The method recited in claim 1 , wherein the process of generating defects comprises generating defects using a gaseous additive.

3. The method recited in claim 1 , wherein the process of generating defects comprises generating defects using an organic additive.

4. The method recited in claim 1 , wherein the nanostructures comprise at least one of carbon nanotubes, carbon nanofibers and semiconductor nanowires.

5. The method recited in claim 1 , wherein the nanostructures comprise helical nanotube or nanofibers.

6. A method of operating an energy storage device, the method comprising:

operating an energy storage device having a plurality of electrodes to input an input electrical current and output an output electrical current; and

electrically coupling a defect-engineered nanomaterial to the plurality of electrodes for storing electrical energy, wherein a level of defects is controlled by an additive so that the level of defects in the defect-engineered nanomaterial is a function of a desired input electrical impedance of the energy storage device.

7. The method of claim 6 , wherein the defects comprise electrically charged defects.

8. The method of claim 7 , wherein the electrically charged defects comprise negatively charged defects.

9. The method of claim 6 , wherein the defects comprise electrically neutral defects.

10. The method of claim 6 , wherein the nanostructures comprise carbon nanotubes or carbon nanofibers.

11. The method of claim 6 , wherein the nanostructures comprise semiconductor nanowires.

12. The method of claim 6 , wherein the nanostructures comprise nonlinear nanostructures.

13. A method of controlling input electrical resistance of an energy storage device, the method comprising:

providing the energy storage device with a plurality of electrodes for inputting and outputting electrical current; and

providing a defect-induced nanomaterial, electrically coupled to the plurality of electrodes, for storing electrical energy;

wherein a level of defects in the defect-induced nanomaterial is a function of a desired input electrical impedance of the energy storage device, and wherein the level of defects is controlled by an additive.

14. The method of claim 13 , wherein the defects comprise electrically charged defects.

15. The method of claim 14 , wherein the electrically charged defects comprise negatively charged defects.

16. The method of claim 13 , wherein the defects comprise electrically neutral defects.

17. The method of claim 13 , wherein the nanostructures comprise carbon nanotubes or carbon nanofibers.

18. The method of claim 13 , wherein the nanostructures comprise semiconductor nanowires.

19. The method of claim 13 , wherein the nanostructures comprise nonlinear nanostructures.